Ms. Jin-Soo Kim Profile

Jin-Soo Kim

at Hynix Semiconductor Inc

SPIE Involvement:

Author

Publications (22)

Proceedings Article | 2 April 2014 Paper

CD uniformity optimization at volume ramp up stage for new product introduction

Jin-Soo Kim, Won-Kwang Ma, Young-Sik Kim, Myoung-Soo Kim, Won-Taik Kwon, Sung-Ki Park, Peter Nikolsky, Marian Otter, Maryana Escalante Marun, Roy Anunciado, Kyu-Tae Sun, Greet Storms, Ewould van West

Proceedings Volume 9050, 905037 (2014) https://doi.org/10.1117/12.2057390

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Yield improvement, Semiconductors, Etching, Photoresist processing, Optical lithography, Process control, Overlay metrology, Manufacturing

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Proceedings Article | 4 December 2008 Paper

Study on imaging characterization of ArF high index immersion lithography

Sarohan Park, Jun-Taek Park, Kilyoung Lee, Tae-Seung Eom, Jin-Soo Kim, Hyeong-Soo Kim, Seung-Chan Moon

Proceedings Volume 7140, 71401K (2008) https://doi.org/10.1117/12.804651

KEYWORDS: Photomasks, Optical lithography, Reflectivity, Immersion lithography, Lithography, Image processing, Image enhancement, Polarization, Semiconducting wafers, Transmittance

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Proceedings Article | 7 March 2008 Paper

The analysis of optical lithography at 2-dimensional dense structure

Chanha Park, Tae-Seung Eom, Hyejin Shin, Kiho Yang, Jinyoung Choi, Jinsoo Kim, Hyeongsoo Kim, Donggyu Yim, Jinwoong Kim

Proceedings Volume 6924, 69244V (2008) https://doi.org/10.1117/12.772446

KEYWORDS: Transistors, Optical lithography, Photomasks, Lithography, Printing, 3D image processing, Binary data, Critical dimension metrology, Etching, Photoresist processing

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Proceedings Article | 7 March 2008 Paper

Comparative study of binary intensity mask and attenuated phase shift mask using hyper-NA immersion lithography for sub-45nm era

Tae-Seung Eom, Jun-Taek Park, Jung-Hyun Kang, Sarohan Park, Sunyoung Koo, Jin-Soo Kim, Byoung-Hoon Lee, Chang-Moon Lim, HyeongSoo Kim, Seung-Chan Moon

Proceedings Volume 6924, 69240H (2008) https://doi.org/10.1117/12.772246

KEYWORDS: Photomasks, Chromium, Binary data, Polarization, Pellicles, Diffraction, Scanners, Phase shifts, Lithography, Immersion lithography

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In this paper, we will present comparison of attenuated phase shift mask and binary intensity mask at hyper-NA immersion scanner which has been the main stream of DRAM lithography. Some technical issues will be reported for polarized illumination in hyper-NA imaging. One att.PSM (Phase Shift Mask) and three types of binary intensity mask are used for this experiment; those are ArF att.PSM ( MoSi:Å ), thick Cr ( 1030Å ) BIM (Binary Intensity Mask), thin Cr ( 590Å ) BIM and multi layer ( Cr:740Å / MoSi:930Å ) BIM. Simulation and experiment with 1.35NA immersion scanner are performed to study influence of mask structure, process margin and effect of polarization. Two types of DRAM cell patterns are studied; one is an isolation pattern with a brick wall shape and another is a storage node pattern with contact hole shape. Line and space pattern is also studied through 38nm to 50nm half pitch for this experiment. Lithography simulation is done by in-house tool based on diffused aerial image model. EM-SUITE is also used in order to study the influence of mask structure and polarization effect through rigorous EMF simulation. Transmission and polarization effects of zero and first diffraction order are simulated for both att.PSM and BIM. First and zero diffraction order polarization are shown to be influenced by the structure of masking film. As pattern size on mask decreases to the level of exposure wavelength, incident light will interact with mask pattern, and then transmittance changes for mask structure. Optimum mask bias is one of the important factors for lithographic performance. In the case of att.PSM, negative bias shows higher image contrast than positive one, but in case of binary intensity mask, positive bias shows better performance than negative one. This is caused by balance of amplitude between first diffraction order and zero diffraction order light. Process windows and mask error enhancement factors are measured with respect to various design rules, i.e., different k1 levels at fixed NA. In the case of one dimensional line and space pattern, thick Cr BIM shows the best performance through various pitches. But in case of two dimensional DRAM cell pattern, it is difficult to find out the advantage of BIM for sub-45nm. It needs further study for two dimensional patterns. Finally, it was observed that thick Cr binary intensity mask for sub-45nm has advantage for one dimensional line and space pattern.

Proceedings Article | 26 March 2007 Paper

Hyper NA polarized imaging of 45nm DRAM

Chang-Moon Lim, Sarohan Park, Yoon-Suk Hyun, Jin-Soo Kim, Tae-Seung Eom, Jun-Taek Park, Seung-Chan Moon, Jin-Woong Kim

Proceedings Volume 6520, 65200B (2007) https://doi.org/10.1117/12.712442

KEYWORDS: Polarization, Optical lithography, Photomasks, Birefringence, Transmittance, Scanners, Lithography, Lithographic illumination, Immersion lithography, Critical dimension metrology

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Proceedings Article | 26 June 2003 Paper

Printing 95-nm DRAM full chip patterns in KrF lithography

Seok-Kyun Kim, Jin-Soo Kim, Tae-Jun Yoo, Keun-Kyu Kong, Hyoung-Soon Yun, Young-Deuk Kim, Hyoung-Ryeun Kim, Young-Sik Kim, Hyeong-Soo Kim

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485435

KEYWORDS: Lithography, Lithographic illumination, Photomasks, Photoresist processing, Printing, Etching, Semiconducting wafers, Critical dimension metrology, Forward error correction, Optical proximity correction

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Proceedings Article | 26 June 2003 Paper

Sub-100-nm DRAM cell patterning results and relation with lens aberration at 248-nm lithography era

Tae-Jun You, Hyeong-Soo Kim, Jin-Soo Kim, Seok-Kyun Kim, Young-Deuk Kim, Hyeong Sun Youn, Keun-Kyu Kong

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485331

KEYWORDS: Lithography, Reticles, Optical lithography, Lithographic illumination, Monochromatic aberrations, Semiconducting wafers, Resolution enhancement technologies, Chemical mechanical planarization, Photoresist processing, Image processing

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Proceedings Article | 12 June 2003 Paper

Effects of quencher ability on profile in chemically amplified resist system

Deogbae Kim, Hyun-Jin Kim, Sook-Hee Cho, Dong-Hwal Lee, Kwang-Hyi Im, Min-Ja Yoo, Sang-Hyang Lee, Jaehyun Kim, Jin-Soo Kim, Hyeong-Soo Kim

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485161

KEYWORDS: Diffusion, Lithography, Polymers, Silicon, Line edge roughness, Chemically amplified resists, Photoresist processing, Semiconducting wafers, Coating, Etching

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Proceedings Article | 12 June 2003 Paper

Effects of alkali treatment on ArF resist process

Jin-Soo Kim, Jae-Chang Jung, Keun-Kyu Kong, Hyoung-Ryeun Kim, Hyeong-Soo Kim

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.483749

KEYWORDS: Monochromatic aberrations, Photoresist processing, Lithography, Cadmium sulfide, Electroluminescence, Photomasks, 193nm lithography, Silicon, Semiconductors, Reliability

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Proceedings Article | 2 June 2003 Paper

Analysis of total CD uniformity at sub-100-nm DRAM patterning by using KrF lithography

Young-Sik Kim, Tae Jun You, Jin-Soo Kim, Seok-Kyun Kim, Keun-Kyu Kong, Young-Deuk Kim, HyeongSoo Kim

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.485009

KEYWORDS: Photomasks, Lithography, Semiconducting wafers, Optical lithography, Forward error correction, Chemical mechanical planarization, Lithographic illumination, Photoresist processing, Monochromatic aberrations, Critical dimension metrology

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