Dr. Jeanette M. Roberts Profile

Dr. Jeanette M. Roberts

Staff Engineer at Intel Corp

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Author

Publications (30)

Proceedings Article | 31 March 2010 Paper

Reaction kinetics of non-reciprocal photo-base generator (NRPBG) patterning

D. Shykind, R. Bristol, J. Roberts, J. Blackwell, Y. Borodovsky

Proceedings Volume 7639, 76391Y (2010) https://doi.org/10.1117/12.846990

KEYWORDS: Optical lithography, Floods, Lithography, Image processing, Systems modeling, Photoresist processing, MATLAB, Optical engineering, Diffraction, Semiconducting wafers

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Proceedings Article | 26 March 2010 Paper

Non-reciprocal double-exposure materials for 193nm pitch division

Robert Bristol, Jeanette Roberts, David Shykind, James Blackwell

Proceedings Volume 7639, 763905 (2010) https://doi.org/10.1117/12.846988

KEYWORDS: Semiconducting wafers, Polymers, Photons, Lithography, Floods, 193nm lithography, Optical lithography, Photoresist materials, Scanners, Photomasks

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We present an overview of lithography results achieved for materials to support "leave-on-chuck" double-exposure pitch-division patterning. These materials attempt to make use of a non-reciprocal photoresponse in which the same number of absorbed 193nm photons can produce different remaining levels of resist, depending upon whether the photons are received all at once or in two separate exposures. This, in principle, allows for the use of two exposures, using independent masks and without removing the wafer from the chuck, to produce non-regular patterning down to one half the pitch limit of the scanner. Such behavior could be produced, for example, by a reversible two-stage Photoacid Generator (PAG) or other non-reciprocal mechanisms. Several stages of lithography screening were done on a large number of candidate systems. Initially, thermal stability, casting behavior, and single-exposure (SE) contrast curves were investigated to determine whether the system behaved as a usable photoresist. The next stage of testing probed non-reciprocal response, in the form of double-exposure (DE) contrast curves, typically with an intervening whole-wafer flood exposure at a longer wavelength to enact the nonreciprocity. The key criterion for the material to pass this stage was to show a shifted contrast curve (difference in photospeed) for DE vs. SE. Such a shift would then imply that pitch-division imaging would be possible for this material. After identifying materials which exhibited this SE vs. DE contrast curve shift, the next step was actual DE patterning. Since the laboratory tool used for these exposures does not have the precise alignment needed to interleave the two exposures for pitch division, we employed a technique in which the second exposure is rotated slightly with respect to the first exposure. This results in a Moiré-type pattern in which the two aerial images transition between overlap and interleave across the wafer. One particular PAG + sensitizer did indeed show the desired DE vs. SE contrast curve shift and pitch-divided imaging (k₁ = 0.125). This system appears to operate on a scheme based on the creation of a photobase generator between the first and second exposures. Unfortunately, the quality of the pitch-divided images degrades quickly as the pitch is decreased, showing severe LER and bridging defects at a final pitch of 220nm. We postulate that this is caused by the diffusion of one or more key photoproducts. Accompanying papers report on both the photochemical details of the reaction pathways of these materials as well as modeling of the reaction kinetics.

Proceedings Article | 1 April 2009 Paper

Sensitivity of EUV resists to out-of-band radiation

Jeanette Roberts, Robert Bristol, Todd Younkin, Theodore Fedynyshyn, David Astolfi, Alberto Cabral

Proceedings Volume 7273, 72731W (2009) https://doi.org/10.1117/12.814342

KEYWORDS: Extreme ultraviolet, Absorbance, Reflectivity, Semiconducting wafers, Polymers, Extreme ultraviolet lithography, Mirrors, Lithography, Silicon, Titanium dioxide

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Proceedings Article | 1 April 2009 Paper

PAG segregation during exposure affecting innate material roughness

Theodore Fedynyshyn, David Astolfi, Alberto Cabral, Susan Cann, Indira Pottebaum, Jeanette Roberts

Proceedings Volume 7273, 727349 (2009) https://doi.org/10.1117/12.814811

KEYWORDS: Polymers, Surface roughness, Polymer thin films, Profiling, Line edge roughness, Photoresist processing, Diffusion, Atomic force microscopy, Line width roughness, Lithography

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Proceedings Article | 15 April 2008 Paper

Effect of PAG and matrix structure on PAG acid generation behavior under UV and high-energy radiation exposure

Cheng-Tsung Lee, Mingxing Wang, Kenneth Gonsalves, Wang Yueh, Jeanette Roberts, Todd Younkin, Clifford Henderson

Proceedings Volume 6923, 69232F (2008) https://doi.org/10.1117/12.782634

KEYWORDS: Polymers, Polymer thin films, Ionization, Picosecond phenomena, Deep ultraviolet, Absorption, Photoresist materials, Molecules, Matrices, Photolysis

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Chemically amplified resists (CAR) have successfully facilitated the development of deep ultra-violet (DUV) and 193 nm lithography techniques for more than two decades due to their acid-catalyzed deprotection scheme that enhances their photospeed. This acid-catalyzed mechanism provides a method for amplifying the initial chemical reactions caused by interaction of radiation with the resist film, thus making each interaction event between radiation and resist more productive. However, when switching from low energy photolysis to high energy radiolysis, changes in the manner in which the radiation interacts with the resist material can alter the acid generation efficiency and mechanism of PAG excitation. In high energy radiation cases where the radiation energy exceeds the ionization potential of the PAG and the polymer resin, the radiation absorption in the resist film becomes non-selective. The ratio of PAG excited by direct excitation as compared to polymer or matrix sensitization pathways can shift heavily in favor of matrix sensitization in such high energy exposure cases. Such sensitization pathways may become a potential method for enhancing resist sensitivity under high energy radiation through careful selection of matrix and PAG materials. A better understanding and study the efficiency of acid generation through direct and indirect PAG excitation pathways and the effect of PAG and matrix structure on these pathways would be extremely valuable for the design of future high sensitivity resist materials. In this work, the acid generation of typical ionic (onium salt) and non-ionic PAGs under DUV (248 nm) and electron-beam exposure in polymer film have been studied. The effect of PAG type and structure on its acid generation under photolysis and radiolysis has been determined. The effect of polymer resin structure on PAG photoacid generation under photolysis and radiolysis has also been investigated. Concepts for PAG and polymer design for producing enhanced sensitivity resists for excitational and ionizational exposure is discussed.

Proceedings Article | 26 March 2008 Paper

Polymer matrix effects on acid generation

Theodore Fedynyshyn, Russell Goodman, Jeanette Roberts

Proceedings Volume 6923, 692319 (2008) https://doi.org/10.1117/12.771692

KEYWORDS: Polymers, Absorbance, Extreme ultraviolet lithography, Extreme ultraviolet, Quantum efficiency, Lithography, Electrons, Line width roughness, Statistical analysis, Molecules

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Proceedings Article | 26 March 2008 Paper

A new technique for studying photo-acid generator chemistry and physics in polymer films using on-wafer ellipsometry and acid-sensitive dyes

Cheng-Tsung Lee, Wang Yueh, Jeanette Roberts, Todd Younkin, Clifford Henderson

Proceedings Volume 6923, 692316 (2008) https://doi.org/10.1117/12.773393

KEYWORDS: Polymers, Polymer thin films, Polymethylmethacrylate, Absorbance, Ellipsometry, Lithography, Deep ultraviolet, Photolysis, Absorption, Chemistry

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Chemically amplified resists (CARs) are likely to continue to be the main resist materials platform for next generation lithography using shorter wavelength and higher energy radiation sources, such as extreme ultra-violet (EUV) and electron-beam (EB) lithography, to pattern features at and below the 32 nm technology node. As the cost of generating and manipulating high energy radiation in these techniques increases dramatically, photoacid generators (PAGs) with high sensitivities to these exposure sources are required to efficiently utilize such radiation and maintain high lithography tool throughputs. On the other hand, the high energy radiation used in current and next generation lithography tools can increasingly interact non-selectively with the PAG and polymer resin. Photoacid generation from PAG sensitization pathways involving the photoresist resin (e.g. polymer) becomes another potential route for boosting the photospeed of CARs if the PAG and matrix resin chemistry is selected properly. In this work, a fast, convenient, and material saving method which can measure the acid generation rate and yield under photolysis and radiolysis, as well as determine the efficiency of acid generation through direct PAG excitation and indirect PAG sensitization pathways has been developed. This method utilizes on-wafer ellipsometry to determine the absorption of protonated Courmarin 6 (C6) dye, which is incorporated into the polymer resin as a proton indicator. In this work, triphenylsulfonium triflate PAG is used in two different matrix resins, poly(methyl methacrylate) and poly(hydroxystyrene), to illustrate this point that matrix sensitization of the PAG can be important and can be studied using the method developed in this work. This study serves as the starting point for building the structure property relationships needed for intelligent PAG and matrix design to optimize exposure energy utilization in CARs. The validity of this new analytical method is verified by comparing our results in selected PAG-polymer combinations with results obtained from previous studies using different techniques. The potential measurement errors possible when using dye as the proton indicator in a solid-state medium, such as the probability of proton-dye contact and acid generation through dye radiation absorption and sensitization of the PAG, are also analyzed and discussed in this paper.

Proceedings Article | 26 March 2008 Paper

Synthesis and properties of new anionic photoacid generators bound polymer resists for e-beam and EUV lithography

Mingxing Wang, Cheng-Tsung Lee, Clifford Henderson, Wang Yueh, Jeanette Roberts, Kenneth Gonsalves

Proceedings Volume 6923, 692312 (2008) https://doi.org/10.1117/12.769004

KEYWORDS: Polymers, Absorption, Extreme ultraviolet lithography, Deep ultraviolet, Lithography, Line edge roughness, Polymer thin films, NOx, Silicon, Scanning electron microscopy

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Proceedings Article | 11 April 2007 Paper

PAG segregation during exposure affecting innate material roughness

Theodore Fedynyshyn, David Astolfi, Alberto Cabral, Jeanette Roberts

Proceedings Volume 6519, 65190X (2007) https://doi.org/10.1117/12.713892

KEYWORDS: Polymers, Surface roughness, Line edge roughness, Photoresist processing, Line width roughness, Lithography, Atomic force microscopy, Diffusion, Profiling, Statistical modeling

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Proceedings Article | 5 April 2007 Paper

Line edge roughness characterization of sub-50nm structures using CD-SAXS: round-robin benchmark results

Chengqing Wang, Ronald Jones, Eric Lin, Wen-li Wu, John Villarrubia, Kwang-Woo Choi, James Clarke, Bryan Rice, Michael Leeson, Jeanette Roberts, Robert Bristol, Benjamin Bunday

Proceedings Volume 6518, 65181O (2007) https://doi.org/10.1117/12.725380

KEYWORDS: Line width roughness, Line edge roughness, Diffraction, Critical dimension metrology, Photoresist materials, X-rays, Scattering, Satellites, Extreme ultraviolet lithography, Sensors

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Proceedings Article | 23 March 2007 Paper

Novel polymeric anionic photo-acid generators (PAGs) and photoresists for sub-100-nm patterning by 193-nm lithography

Mingxing Wang, Nathan Jarnagin, Wang Yueh, Jeanette Roberts, Melina Tapia-Tapia, Nikola Batina, Kenneth Gonsalves

Proceedings Volume 6519, 65192C (2007) https://doi.org/10.1117/12.711477

KEYWORDS: Polymers, Fluorine, Line edge roughness, Lithography, Photoresist materials, Optical lithography, Polymerization, Etching, Resistance, Semiconducting wafers

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Proceedings Article | 23 March 2007 Paper

Novel anionic photoacid generator (PAGs) and photoresist for sub-50-nm patterning by EUVL and EBL

Mingxing Wang, Cheng-Tsung Lee, Clifford Henderson, Wang Yueh, Jeanette Roberts, Kenneth Gonsalves

Proceedings Volume 6519, 65191F (2007) https://doi.org/10.1117/12.712143

KEYWORDS: Polymers, Extreme ultraviolet lithography, Line edge roughness, Extreme ultraviolet, Photoresist materials, Electron beam lithography, Lithography, Polymerization, Image processing, Optical lithography

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Proceedings Article | 23 March 2007 Paper

Photosensitivity and line-edge roughness of novel polymer-bound PAG photoresists

Cheng-Tsung Lee, Mingxing Wang, Nathan Jarnagin, Kenneth Gonsalves, Jeanette Roberts, Wang Yueh, Clifford Henderson

Proceedings Volume 6519, 65191E (2007) https://doi.org/10.1117/12.713369

KEYWORDS: Polymers, Line edge roughness, Lithography, Analog electronics, Diffusion, Image resolution, Polymer thin films, Silicon, Photoresist materials, Semiconducting wafers

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Substantially improved photoresist material designs, which can provide higher photosensitivity and precise critical dimension and edge roughness control, will be required to enable the application of next generation lithography technology to the production of future sub-65 nm node IC device generations. The development and characterization of novel material platforms that solve the aforementioned basic problems with chemically amplified resists (CARs) is essential and is already one of the major subjects of modern lithography research. In that regard, we have pursued development of a variety of 193 nm and EUV CARs that contain photoacid generator (PAG) units covalently bonded directly to the resin polymer backbone. However, the detailed structure-property relationships that result from this direct attachment of the PAG functional group to the polymer have previously not yet been rigorously characterized. In this work, the lithographic properties of a polymer-bound PAG CAR (GBLMA-co-EAMA-co-F4-MBS.TPS) and its blended-PAG analog resist (GBLMA-co-EAMA blend F4-IBBS.TPS) were studied and compared. The direct incorporation of PAG functionality into the resist polymer, where the resulting photoacid remains bound to the polymer, showed improved photosensitivity, resolution, and lower LER as compared with the analogous blended-PAG resist. The improved resolution and LER were expected due to the restricted photoacid diffusion and uniform PAG distribution provided by direct incorporation of the PAG into the polymer backbone to make a single-component resist material. The ability to load higher levels of PAG into the resist provided by this PAG incorporation into the polymer, as compared to the low PAG concentrations attainable by traditional blending approaches, overcomes the sensitivity loss that should result from reduction in photoacid diffusivity and concomitant smaller acid-catalytic chain lengths. In fact, the polymer-bound PAG resist achieves a faster photospeed than the blended-PAG analog material under DUV radiation in the case of the materials reported here while still providing all of the aforementioned improvements such as the improved line edge roughness.

Proceedings Article | 21 March 2007 Paper

Changes in resist glass transition temperatures due to exposure

Theodore Fedynyshyn, Indira Pottebaum, Alberto Cabral, Jeanette Roberts

Proceedings Volume 6519, 651917 (2007) https://doi.org/10.1117/12.713886

KEYWORDS: Polymers, Glasses, Temperature metrology, FT-IR spectroscopy, Polymer thin films, Photochemistry, Lithography, Surface roughness, Semiconducting wafers, Line width roughness

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Proceedings Article | 21 March 2007 Paper

Molecular glass photoresists containing photoacid generator functionality: a route to a single-molecule photoresist

Richard Lawson, Cheng-Tsung Lee, Robert Whetsell, Wang Yueh, Jeanette Roberts, Laren Tolbert, Clifford Henderson

Proceedings Volume 6519, 65191N (2007) https://doi.org/10.1117/12.712928

KEYWORDS: Glasses, Line edge roughness, Etching, Polymers, Photoresist materials, Deep ultraviolet, Extreme ultraviolet lithography, Diffusion, Molecules, Reactive ion etching

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Proceedings Article | 21 March 2007 Paper

Component segregation in model chemically amplified resists

John Woodward, Theodore Fedynyshyn, David Astolfi, Susan Cann, Jeanette Roberts, Michael Leeson

Proceedings Volume 6519, 651915 (2007) https://doi.org/10.1117/12.711152

KEYWORDS: Atomic force microscopy, Polymers, Line edge roughness, Microscopy, Lithography, Chemically amplified resists, Surface roughness, Extreme ultraviolet, Extreme ultraviolet lithography, Profiling

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SPIE Journal Paper | 1 October 2006

Resist deconstruction as a probe for innate material roughness

Theodore Fedynyshyn, Roger Sinta, David Astolfi, Russell Goodman, Alberto Cabral, Jeanette Roberts, Robert Meagley

JM3, Vol. 5, Issue 04, 043010, (October 2006) https://doi.org/10.1117/12.10.1117/1.2408410

KEYWORDS: Polymers, Surface roughness, Polymer thin films, Line edge roughness, Line width roughness, Photoresist processing, Profiling, Atomic force microscopy, Semiconducting wafers, Lithography

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Proceedings Article | 31 March 2006 Paper

Fundamental studies of the properties of photoresists based on resins containing polymer-bound photoacid generators

Cheng-Tsung Lee, Nathan Jarnagin, Mingxing Wang, Kenneth Gonsalves, Jeanette Robert, Wang Yueh, Clifford Henderson

Proceedings Volume 6153, 61532E (2006) https://doi.org/10.1117/12.663410

KEYWORDS: Polymers, Data modeling, Diffusion, Photoresist materials, FT-IR spectroscopy, Statistical modeling, Molecules, Extreme ultraviolet lithography, Polymer thin films, Reflectivity

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Proceedings Article | 29 March 2006 Paper

Deconstructing the resist to probe innate material roughness

T. H. Fedynyshyn, R. F. Sinta, D. K. Astolfi, A. Cabral, J. Roberts, R. Meagley

Proceedings Volume 6153, 615315 (2006) https://doi.org/10.1117/12.654437

KEYWORDS: Polymers, Surface roughness, Line edge roughness, Photoresist processing, Polymer thin films, Profiling, Lithography, Semiconducting wafers, Line width roughness, Silicon

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Proceedings Article | 29 March 2006 Paper

Resists for sub-100nm patterning at 193nm exposure

N. Jarnagin, K. Gonsalves, M. Wang, J. Roberts, W. Yeuh

Proceedings Volume 6153, 61534P (2006) https://doi.org/10.1117/12.656457

KEYWORDS: Polymers, Polymerization, Scanning electron microscopy, Optical lithography, Line edge roughness, Semiconducting wafers, Chemically amplified resists, Roads, Diffusion, Applied research

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Proceedings Article | 29 March 2006 Paper

Contributions to innate material roughness in resist

Jeanette Roberts, Robert Meagley, Theodore Fedynyshyn, Roger Sinta, David Astolfi, Russell Goodman, Alberto Cabral

Proceedings Volume 6153, 61533U (2006) https://doi.org/10.1117/12.655740

KEYWORDS: Polymers, Surface roughness, Line width roughness, Standards development, Semiconducting wafers, FT-IR spectroscopy, Extreme ultraviolet lithography, Photolysis, Atomic force microscopy, Lithography

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Proceedings Article | 10 May 2005 Paper

Characterization and modeling of line width roughness (LWR)

Vassilios Constantoudis, Evangelos Gogolides, Jeanette Roberts, Jason Stowers

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.600563

KEYWORDS: Line edge roughness, Line width roughness, Metrology, Digital Light Processing, Critical dimension metrology, Inspection, Process control, Optical lithography, Silver, Control systems

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Proceedings Article | 6 May 2005 Paper

One small step: world's first integrated EUVL process line

Jeanette Roberts, Terence Bacuita, Robert Bristol, Heidi Cao, Manish Chandhok, Sang Lee, Eric Panning, Melissa Shell, Guojing Zhang, Bryan Rice

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.600259

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Photomasks, Semiconducting wafers, Reflectivity, Reticles, Mirrors, Light sources, Plasma, Mask making

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Proceedings Article | 6 May 2005 Paper

Characterization of flare on Intel’s EUV MET

Sang Hun Lee, Manish Chandhok, Jeanette Roberts, Bryan Rice

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.600154

KEYWORDS: Extreme ultraviolet, Point spread functions, Mirrors, Extreme ultraviolet lithography, Photomasks, Scattering, Wavefronts, Lithography, Deep ultraviolet, Light scattering

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Proceedings Article | 4 May 2005 Paper

EUV resist patterning performance from the Intel microexposure tool (MET)

Heidi Cao, Wang Yueh, Jeanette Roberts, Bryan Rice, Robert Bristol, Manish Chandhok

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.600214

KEYWORDS: Line width roughness, Extreme ultraviolet, Optical lithography, Absorbance, Scatterometry, Scanning electron microscopy, Lithography, Scatter measurement, Image resolution, Extreme ultraviolet lithography

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Proceedings Article | 24 May 2004 Paper

CD metrology for the 45-nm and 32-nm nodes

Bryan Rice, Heidi Cao, Ovijut Chaudhuri, Michael Grumski, Bruce Harteneck, Alex Liddle, Deidre Olynick, Jeanette Roberts

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.536071

KEYWORDS: Critical dimension metrology, Scanning electron microscopy, Semiconducting wafers, Metrology, Scatterometry, Silicon, Atomic force microscopy, Semiconductors, Manufacturing, Ion beams

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Proceedings Article | 24 May 2004 Paper

Prospects for using primary electron-based CD metrology

Bryan Rice, Gary Crays, Alex Danilevsky, Michael Grumski, Shunsuke Koshihara, Tadashi Otaka, Jeanette Roberts

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.544232

KEYWORDS: Control systems, Scanning electron microscopy, Critical dimension metrology, Semiconducting wafers, Metrology, Image processing, Transistors, Oxides, Silicon, Semiconductors

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Proceedings Article | 14 May 2004 Paper

Sources of line-width roughness for EUV resists

Heidi Cao, Wang Yueh, Bryan Rice, Jeanette Roberts, Terence Bacuita, Manish Chandhok

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.536041

KEYWORDS: Line width roughness, Photoresist materials, Polymers, Diffusion, Molecules, Extreme ultraviolet, Line edge roughness, Scanning electron microscopy, Lithography, Edge roughness

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Proceedings Article | 12 June 2003 Paper

Intel's EUV resist development

Heidi Cao, Jeanette Roberts, Janel Dalin, Manish Chandhok, Robert Meagley, Eric Panning, Melissa Shell, Bryan Rice

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485095

KEYWORDS: Extreme ultraviolet, Line width roughness, Absorbance, Photoresist materials, Extreme ultraviolet lithography, Photoresist developing, Optical lithography, Lithography, Polymers, Line edge roughness

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Proceedings Article | 12 June 2003 Paper

Intel benchmarking and process integration of 157-nm resists

James Powers, Jeanette Roberts, Paul Zimmerman, Robert Meagley, E. Steve Putna, Uday Shah

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.483730

KEYWORDS: Etching, Silicon, Line width roughness, Dry etching, Absorbance, Photoresist materials, Imaging systems, Electroluminescence, Optical lithography, Lithography

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Showing 5 of 30 publications

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