Hybrid perovskites have emerged as exceptional semiconductors for optoelectronic applications. Here, we control the cation alloying to push optoelectronic performance through alteration of the charge carrier dynamics in mixed-halide perovskites. In contrast to single-halide perovskites, we find high luminescence yields for photo-excited carrier densities far below solar illumination conditions. Using time-resolved spectroscopy we show that the charge-carrier recombination regime changes from second to first order within the first tens of nanoseconds after excitation. Supported by microscale-mapping of the optical bandgap and elemental composition, electrically-gated transport measurements and first-principles calculations, we demonstrate that spatially-varying energetic disorder in the electronic states causes local charge accumulation, creating p- and n-type photo-doped regions, which unearths a strategy for efficient light emission at low charge-injection in solar cells and LEDs.
Hybrid halide perovskites are at the frontier of optoelectronic research due to their excellent semiconductor properties and solution processability. For this reason, much attention has recently been focused on understanding photoexcited charge-carrier generation and recombination in these materials. Conversely, very few studies have so far been devoted to understanding carrier-carrier and carrier-phonon scattering mechanisms in these materials. This is surprising given that carrier scattering mechanisms fundamentally limit charge-carrier motilities and therefore the performance of photovoltaic devices. We apply linear polarization selective transient absorption measurements to polycrystalline CH3NH3PbBr3 hybrid halide perovskite films as an effective way of studying the scattering processes in these materials. Comparison of the photo induced bleach signals obtained when the linear polarizations of the pump and probe are aligned either parallel or perpendicular to one another, reveal a significant difference in spectral intensity and shape within the first few hundred femtoseconds after photoexcitation.
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