Dr. James Welch Taylor Profile

Dr. James Welch Taylor

Assoc. Director & Professor at Univ of Wisconsin-Madison

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Author

Publications (23)

Proceedings Article | 20 May 2004 Paper

Modeling for sub-50-nm x-ray application with phase masks

James Taylor, Daniel Malueg, Franco Cerrina, Mumit Khan, Don Thielman

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.535422

KEYWORDS: Photomasks, X-rays, Semiconducting wafers, Phase shifts, Silicon, Lithography, Wavefronts, Silicon carbide, Beam propagation method, Photoresist materials

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Proceedings Article | 21 July 2000 Paper

Processing latitude study on x-ray phase-shifting masks

Lei Yang, Mumit Khan, James Taylor, Yuli Vladimirsky, Niru Dandekar

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390092

KEYWORDS: Photomasks, Phase shifts, X-rays, Phase shifting, X-ray lithography, Lithography, X-ray sources, Critical dimension metrology, Gold, Silicon carbide

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Proceedings Article | 3 September 1999 Paper

Fabrication of x-ray phase masks for sub-70-nm imaging

Lei Yang, Yuli Vladimirsky, James Taylor

Proceedings Volume 3875, (1999) https://doi.org/10.1117/12.360472

KEYWORDS: Photomasks, X-rays, Phase shifts, Semiconducting wafers, Silicon, X-ray lithography, Lithography, Etching, Optical lithography, Semiconductors

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Proceedings Article | 25 June 1999 Paper

X-ray mask fabrication at CXrL

Quinn Leonard, Jaz Bansel, Lei Yang, Olga Vladimirsky, Srinivas Bollepalli, Mumit Khan, Yuli Vladimirsky, Franco Cerrina, James Taylor, Klaus Simon, Lynn Rathbun, Richard Tiberio

Proceedings Volume 3676, (1999) https://doi.org/10.1117/12.351147

KEYWORDS: Photomasks, X-rays, Gold, Etching, X-ray lithography, Photoresist materials, Lithography, Silicon, Electron beam lithography, Scanning electron microscopy

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Proceedings Article | 25 June 1999 Paper

Evaluation of photoacid generators in chemically amplified resists for x-ray lithography using an on-wafer photoacid determination technique

Bing Lu, Paul Dentinger, James Taylor, Gilbert Feke, Dan Hessman, Qiang Wu, Robert Grober

Proceedings Volume 3676, (1999) https://doi.org/10.1117/12.351121

KEYWORDS: Luminescence, Lithography, Semiconducting wafers, Chemically amplified resists, Hydrogen, Halogens, X-ray lithography, X-rays, FT-IR spectroscopy, Nondestructive evaluation

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Proceedings Article | 25 June 1999 Paper

Sub-100-nm imaging in x-ray lithography

Olga Vladimirsky, Niru Dandekar, Wenlong Jiang, Quinn Leonard, Klaus Simon, Srinivas Bollepalli, Yuli Vladimirsky, James Taylor

Proceedings Volume 3676, (1999) https://doi.org/10.1117/12.351161

KEYWORDS: Photomasks, Lithography, X-ray lithography, Diffraction, X-rays, Opacity, Synchrotrons, Near field diffraction, Photoresist processing, Printing

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Proceedings Article | 11 June 1999 Paper

Comparison of measured sidewall roughness for positive-tone chemically amplified resists exposed by x-ray lithography

Geoffrey Reynolds, James Taylor

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350240

KEYWORDS: X-ray lithography, Photomasks, Chemically amplified resists, X-rays, Semiconducting wafers, Photoresist processing, Scanners, Image processing, X-ray optics, Atomic force microscopy

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Proceedings Article | 29 June 1998 Paper

Effect of processing on surface roughness for a negative-tone chemically amplified resist exposed by x-ray lithography

Geoffrey Reynolds, James Taylor

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312477

KEYWORDS: Surface roughness, Atomic force microscopy, Semiconducting wafers, Photoresist materials, Absorbance, X-ray lithography, X-rays, Photoresist developing, Polymers, Lithography

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As critical dimensions for devices continue to shrink, there is concern over the possible resist sidewall contributions to the critical dimension error budget. Because top surface roughness is substantially easier to measure than the sidewall roughness, it is the purpose of this paper to correlate top surface and sidewall roughness to the processing parameters of dose and development conditions that effect the overall roughness and to explore some possible reasons for the differences in the top surface and sidewall roughness. Initial atomic force microscopy results on the resist top surface indicate that there is a general correlation between the top surface roughness and the processing conditions of dose and development. The sidewall roughness results, however, indicate that the sidewall roughness is relatively independent of the dose and development conditions for the negative-tone, chemically- amplified resist, Shipley SAL 605. The root mean square roughness (R_rms) for the resist sidewalls was on the order of 5.2 +/- 0.5 nm for X-ray exposure. The top surface roughness for the resist at optimized lithographic conditions of 80 mJ/cm² developed with 0.254 N tetramethylammonium hydroxide was 7.2 +/- 1 nm. These studies, looking at the effects of dose, have shown that increasing the dose decreases the top surface roughness. The extent of the linking reaction, as measured by FTIR, has been compared to the roughness of the resist for samples that have the same approximate linking but have had radically different dose and thermal histories. These preliminary results indicate that there is a general correlation between the extent of linking and the roughness. Samples exposed to a very high dose (650 mJ/cm²) but subjected to short post-exposure bake times (4.1 sec at 108 degree(s)) show similar roughness to samples exposed with lower doses (150 mJ/cm²) but longer PEB times (40 sec at 108 degree(s)). The development conditions provide another major contributing factor in the top surface roughness. Decreasing the developer concentration decreases the top surface roughness of the resist. Adding particular quaternary ammonium salts to the developer decreases the surface roughness and slows the dissolution rate. The goal of these efforts with developer additives was to find the appropriate processing conditions that would yield surface roughness below 3 nm for 100 nm lines. This paper will also explore possible explanations for the effect of developer conditions on the observed roughness in light of current dissolution theories.

Proceedings Article | 5 June 1998 Paper

Surface chemistry of GaAs wafers and reaction with chemically amplified resists during resist processing

Bing Lu, Olga Vladimirsky, James Taylor, Niru Dandekar

Proceedings Volume 3331, (1998) https://doi.org/10.1117/12.309610

KEYWORDS: Semiconducting wafers, Gallium arsenide, Oxides, Photoresist processing, Chemical analysis, Gallium, Ions, Mass spectrometry, Spectroscopy, Optical lithography

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Proceedings Article | 5 June 1998 Paper

Photoacid generator study for chemically amplified negative resists for high-resolution lithography

Paul Dentinger, Kurtis Knapp, Geoffrey Reynolds, James Taylor, Theodore Fedynyshyn, Todd Richardson

Proceedings Volume 3331, (1998) https://doi.org/10.1117/12.309618

KEYWORDS: Surface roughness, Atomic force microscopy, Semiconducting wafers, X-ray lithography, X-rays, Scanning electron microscopy, FT-IR spectroscopy, Photomasks, Lithography, Catalysis

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Proceedings Article | 27 May 1996 Paper

Importance of chemistry at the resist-wafer interface for mechanical and lithographic adhesion

Paul Dentinger, James Taylor

Proceedings Volume 2723, (1996) https://doi.org/10.1117/12.240476

KEYWORDS: Semiconducting wafers, Head-mounted displays, Oxides, Lithography, Interfaces, Photoresist materials, Silicon, Polymethylmethacrylate, Polymers, Photoresist developing

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Proceedings Article | 9 June 1995 Paper

Quantitative analysis of chemically amplified negative photoresist using mirror-backed infrared reflection absorption spectroscopy

Chris Gamsky, Paul Dentinger, Glenn Howes, James Taylor

Proceedings Volume 2438, (1995) https://doi.org/10.1117/12.210376

KEYWORDS: Semiconducting wafers, Infrared spectroscopy, X-rays, Reflection, Silicon, Silicon films, Process control, Calibration, Photoresist materials, Infrared radiation

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Infrared spectroscopy is a powerful tool for studying chemical reactions which take place in photoresist films. It provides information about functional groups present in the material, is nondestructive to the sample, can be used to monitor reactions in real-time, and can be used as a monitor for real-time process control. Transmission spectroscopy has been used for determination of rate constants for the post exposure bake (PEB) step in both positive and negative chemically amplified x-ray resists, but in transmission the IR beam must pass through the wafer in order to reach the detector. Reflection spectroscopy is more suitable for on-line monitoring because all the optics are located on the same side of the wafer; however, traditional reflection spectra of thin films contain interference fringes which make quantitative analysis difficult. We have developed a method, called mirror-backed infrared reflection- absorption spectroscopy (MBIRRAS), that eliminates the problem of interference fringes in reflection spectra. The method is capable of providing quantitative information about the concentration of functional groups in resist films and produced a linear calibration curve for a commercial crosslinker (hexamethoxymethylmelamine) in a Novolac matrix over a 20% by weight range of concentrations. MBIRRAS was also used to monitor the height of an IR peak corresponding to formation of crosslinks in Shipley negative-tone resist SAL 605 at various processing conditions. The results of this experiment show that PEB time and temperature, prebake time and temperature, and delay between exposure and PEB, all have statistically significant effects on the extent of crosslinking during PEB. In order to explain the observed effect of prebake conditions on the amount of crosslinking during the PEB step and to define the acceptable range of prebaking conditions for resist/wafer adhesion studies, another experiment was performed to demonstrate that thermally generated crosslinking occurred during an additional prebake step without any exposure to x rays. In fact, an additional prebake for 60 seconds at 110 degree(s)C can generate the same number of crosslinks as an x- ray dose of 4 mJ/cm², while baking for 60 minutes at 110 degree(s)C is equivalent to an x-ray dose that is greater than the resist sensitivity (42 mJ/cm²). Noticeable changes in crosslink concentration were detected at 30 seconds. This suggests that crosslinking occurs during the normal prebake step and explains the dependence of linewidth on prebake time. Finally, a correlation was demonstrated between printed linewidth and MBIRRAS peak height corresponding to crosslink formation in SAL 605. This correlation, along with the demonstrated precision of the MBIRRAS method (3 sigma <EQ 3%), suggests that MBIRRAS can be used as an on-line monitor for adaptive control of the processing of SAL 605, thus reducing critical dimension (CD) variation from wafer to wafer for 0.25 micrometers lithography.2438

Proceedings Article | 19 May 1995 Paper

Electrical linewidth measurements and simulations studying the effect of dose and gap on exposure latitude in x-ray lithography

Christine Nelson, Scott Hector, William Chu, Philip Seese, Matthew Thompson, Victor Pol, Mark McCord, James Oberschmidt, James Taylor

Proceedings Volume 2437, (1995) https://doi.org/10.1117/12.209161

KEYWORDS: Etching, Scanning electron microscopy, Semiconducting wafers, X-ray lithography, Photomasks, Resistance, Metrology, Lithography, Synchrotrons, Reactive ion etching

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Proceedings Article | 13 May 1994 Paper

X-ray lithography processing at CXrL from beamline to quarter-micron NMOS devices

Ramez Nachman, Gong Chen, Michael Reilly, Gregory Wells, John Wallace, Hsin Li, Azalia Krasnoperova, Paul Anderson, Eric Brodsky, Eti Ganin, Stephen Campbell, James Taylor, Franco Cerrina

Proceedings Volume 2194, (1994) https://doi.org/10.1117/12.175835

KEYWORDS: Photomasks, Semiconducting wafers, Optical alignment, X-rays, X-ray lithography, Mirrors, Coating, Beryllium, X-ray optics, Aluminum

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Proceedings Article | 13 May 1994 Paper

Spectral effects on x-ray lithography

Whitson Waldo, Azalia Krasnoperova, Mumit Khan, Cristiano Capasso, James Taylor, Franco Cerrina

Proceedings Volume 2194, (1994) https://doi.org/10.1117/12.175798

KEYWORDS: Photomasks, Aluminum, Photons, Mirrors, X-ray lithography, Optical filters, Electrons, Absorption, Magnesium, Beryllium

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Proceedings Article | 13 May 1994 Paper

Comparative study of x-ray lithography process optimization using theoretical and empirical tools

Whitson Waldo, Cristiano Capasso, Azalia Krasnoperova, Mumit Khan, James Taylor, Franco Cerrina

Proceedings Volume 2194, (1994) https://doi.org/10.1117/12.175833

KEYWORDS: Photomasks, X-ray lithography, Gold, Photoresist processing, Mirrors, Photoresist developing, Photoresist materials, Scanning electron microscopy, Image processing, Diffusion

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Proceedings Article | 13 May 1994 Paper

Modeling of a positive chemically amplified photoresist for x-ray lithography

Azalia Krasnoperova, Steven Rhyner, Yueqi Zhu, James Taylor, Franco Cerrina, Whitson Waldo

Proceedings Volume 2194, (1994) https://doi.org/10.1117/12.175805

KEYWORDS: Photoresist materials, Diffusion, X-rays, Photoresist developing, X-ray lithography, FT-IR spectroscopy, Photomasks, Absorption, Optical lithography, Polymers

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Proceedings Article | 1 May 1994 Paper

Optimum-forced current for electrical linewidth measurements of submicron features

Jyh-shyang Jenq, James Taylor, Michael Reilly

Proceedings Volume 2196, (1994) https://doi.org/10.1117/12.174150

KEYWORDS: Resistance, Doping, Bridges

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Proceedings Article | 15 September 1993 Paper

Track oriented chemically-amplified resist processes for quarter-micron lithography

Michael Reilly, Azalia Krasnoperova, Quinn Leonard, James Taylor, Shaowie Pan

Proceedings Volume 1925, (1993) https://doi.org/10.1117/12.154768

KEYWORDS: Photoresist processing, X-ray lithography, Lithography, Standards development, Photomasks, Data processing, Semiconducting wafers, Optimization (mathematics), Algorithm development, Diffusion

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Proceedings Article | 24 June 1993 Paper

Soft x-ray (14 nm) lithography with ultrathin imaging layers and selective electroless metallization

Jeffrey Calvert, Tim Koloski, Walter Dressick, Charles Dulcey, Martin Peckerar, Franco Cerrina, James Taylor, Doowon Suh, Obert Wood, Alastair MacDowell, Raissa D'Souza

Proceedings Volume 1924, (1993) https://doi.org/10.1117/12.146514

KEYWORDS: X-rays, Metals, Electroluminescence, Silicon, Semiconducting wafers, X-ray lithography, Polymethylmethacrylate, Image processing, Halogens, Oxides

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Proceedings Article | 1 June 1992 Paper

Correlation of Si wafer FTIR spectra with wafer temperatures and resist durability variations in plasma etching processes

Gregory Luckman, Carl Babcock, Helen Maynard, Chris Gamsky, James Taylor

Proceedings Volume 1672, (1992) https://doi.org/10.1117/12.59750

KEYWORDS: Semiconducting wafers, FT-IR spectroscopy, Etching, Plasma etching, Silicon, Reflection, Reflectivity, Plasma, Electrodes, Photoresist processing

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Proceedings Article | 1 August 1991 Paper

Chemically amplified resists for x-ray and e-beam lithography

Amanda Berry, Karen Graziano, Stephen Thompson, James Taylor, Doowon Suh, Dean Plumb

Proceedings Volume 1465, (1991) https://doi.org/10.1117/12.47358

KEYWORDS: X-rays, X-ray lithography, Absorption, Synchrotrons, Absorbance, Electron beam lithography, Manufacturing, Photoresist processing, X-ray technology, Plasma etching

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Proceedings Article | 1 June 1991 Paper

Process latitude measurements on chemically amplified resists exposed to synchrotron radiation

Carl Babcock, James Taylor, Monroe Sullivan, Doowon Suh, Dean Plumb, Shane Palmer, Amanda Berry, Karen Graziano, Theodore Fedynyshyn

Proceedings Volume 1466, (1991) https://doi.org/10.1117/12.46413

KEYWORDS: X-rays, X-ray lithography, Photomasks, Synchrotron radiation, Semiconducting wafers, Synchrotrons, Chemically amplified resists, Photoresist processing, Silver, Standards development

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Showing 5 of 23 publications

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