SiOnyx has demonstrated imaging at light levels below 1 mLux at 60 FPS with a SXGA backside illuminated CMOS image sensor in a compact, low latency camera. Sub mLux imaging is enabled by the combination of enhanced quantum efficiency in the near infrared, backside illumination for 100% fill factor, and state of the art read noise of 1.1 e/pix. The quantum efficiency enhancement is achieved by utilizing SiOnyx’s proprietary nano and microtexturing processing technology in a backside illuminated architecture for high fill factor and enhanced near infrared absorption. The sensors can be configured with Bayer color filters for color imaging below quarter moon.
SiOnyx has extended the spectral sensitivity of a high performance low cost CMOS image sensor to cover the spectral band from 400nm to 1200nm. The enhanced quantum efficiency is combined with a CMOS sensor design that demonstrates state of the art read noise characteristics and low fixed pattern noise. The resultant sensor exhibits high signal to noise ratio throughout all lighting conditions from noon day sun to moonless clear starlight. In outdoor nighttime conditions, the extended quantum efficiency at wavelengths beyond 1000nm enables the silicon sensor to image “nightglow” illumination. This spectral range has historically only been accessible using non-silicon based SWIR sensors. This enables a true digital nightvision sensor with demonstrated imaging performance at 60 FPS at light levels below 1 mLux. The quantum efficiency enhancement is achieved by utilizing SiOnyx’s proprietary ultrafast laser semiconductor processing technology that enhances the absorption of light within a thin pixel layer. Recent progress in device architecture has enabled a further step change in near infrared quantum efficiency performance leading to improved nightglow imaging. SiOnyx has integrated this sensor into various camera systems for surveillance, nightvision and 1064nm laser see-spot.
SiOnyx has demonstrated imaging at light levels below 1 mLux (moonless starlight) at video frame rates with a 720P CMOS image sensor in a compact, low latency camera. Low light imaging is enabled by the combination of enhanced quantum efficiency in the near infrared together with state of the art low noise image sensor design. The quantum efficiency enhancements are achieved by applying Black Silicon, SiOnyx’s proprietary ultrafast laser semiconductor processing technology. In the near infrared, silicon’s native indirect bandgap results in low absorption coefficients and long absorption lengths. The Black Silicon nanostructured layer fundamentally disrupts this paradigm by enhancing the absorption of light within a thin pixel layer making 5 microns of silicon equivalent to over 300 microns of standard silicon. This results in a demonstrate 10 fold improvements in near infrared sensitivity over incumbent imaging technology while maintaining complete compatibility with standard CMOS image sensor process flows. Applications include surveillance, nightvision, and 1064nm laser see spot. Imaging performance metrics will be discussed.
Demonstrated performance characteristics:
Pixel size : 5.6 and 10 um
Array size: 720P/1.3Mpix
Frame rate: 60 Hz
Read noise: 2 ele/pixel
Spectral sensitivity: 400 to 1200 nm (with 10x QE at 1064nm)
Daytime imaging: color (Bayer pattern)
Nighttime imaging: moonless starlight conditions
1064nm laser imaging: daytime imaging out to 2Km
SiOnyx has demonstrated imaging at light levels below 1 mLux at 60 FPS with a 720P CMOS image sensor in a compact, low latency camera. The camera contains a 1 inch (16 mm) optical format sensor and streams uncompressed video over CameraLink with row wise image latency below 1 msec. Sub mLux imaging is enabled by the combination of enhanced quantum efficiency in the near infrared together with state of the art low noise image sensor design. The quantum efficiency enhancement is achieved by utilizing SiOnyx’s proprietary ultrafast laser semiconductor processing technology that enhances the absorption of light within a thin pixel layer. Our technology demonstrates a 10 fold improvement in infrared sensitivity over incumbent imaging technology while maintaining complete compatibility with standard CMOS image sensor process flows. Applications include surveillance, nightvision, and 1064nm laser see-spot.
SiOnyx has developed visible and infrared CMOS image sensors leveraging a proprietary ultrafast laser
semiconductor process technology. This technology demonstrates 10 fold improvements in infrared
sensitivity over incumbent imaging technology while maintaining complete compatibility with standard
CMOS image sensor process flows. Furthermore, these sensitivity enhancements are achieved on a focal
plane with state of the art noise performance of 2 electrons/pixel. By capturing light in the visible regime as
well as infrared light from the night glow, this sensor technology provides imaging in daytime through
twilight and into nighttime conditions. The measured 10x quantum efficiency at the critical 1064 nm laser
node enables see spot imaging capabilities in a variety of ambient conditions. The spectral sensitivity is
from 400 to 1200 nm.
SiOnyx has developed infrared enhanced CMOS image sensors leveraging a proprietary ultrafast laser semiconductor process technology. This technology demonstrates 10 fold improvements in infrared sensitivity over incumbent imaging technology while maintaining complete compatibility with standard CMOS image sensor process flows. Furthermore, these sensitivity enhancements are achieved on a focal plane with state of the art noise performance of 2 electrons/pixel. The focal plane is color enabled but high transmission of near infrared light allows for near infrared imaging from 850 to 1200 as well. The quantum efficiency enhancements have significant performance benefits in imaging 1064nm laser light as well as 850nm imaging of iris signatures for improved biometric identification.
SiOnyx has developed a CMOS image sensor with enhanced infrared sensitivity. The technology deployed in this
remarkable device is based on SiOnyx's proprietary ultrafast laser semiconductor process. We have established a high
volume manufacturing process while maintaining complete compatibility with standard CMOS image sensor process flows.
The enhanced performance proves the viability of a highly scalable low cost digital infrared sensor. The spectral sensitivity
is from 400 to 1200 nm with measured quantum efficiency improvements of more than 3x at 940 nm.
SiOnyx has developed a novel silicon processing technology for CMOS sensors that will extend spectral sensitivity into the
near/shortwave infrared (NIR/SWIR) and enable a full performance digital night vision capability comparable to that of
current image-intensifier based night vision goggles. The process is compatible with established CMOS manufacturing
infrastructure and has the promise of much lower cost than competing approaches. The measured thin layer quantum
efficiency is as much as 10x that of incumbent imaging sensors with spectral sensitivity from 400 to 1200 nm.
SiOnyx has developed a novel silicon processing technology for CMOS sensors that will extend spectral
sensitivity into the near/shortwave infrared (NIR/SWIR) and enable a full performance digital night vision
capability comparable to that of current image-intensifier based night vision goggles. The process is
compatible with established CMOS manufacturing infrastructure and has the promise of much lower cost
than competing approaches. The measured thin layer quantum efficiency is as much as 10x that of
incumbent imaging sensors with spectral sensitivity from 400 to 1200 nm.
A laser processing method was used to microstructure the surface of position-sensitive silicon avalanche photodiodes (PSAPDs) and enhance their near-infrared response. Following laser microstructuring and high-temperature annealing, experiments were performed on PSAPDs to determine their performance at 1064 nm. As a result of this processing
method, we fabricated APDs with quantum efficiencies as high as 58% at 1064 nm. The enhanced near-infrared response has now been realized in both lateral effect and quadrant-type PSAPDs without altering their electronic noise, avalanche gain or position resolution. A near-infrared-enhanced PSAPD module with temperature control and position output was assembled and tested.
Room temperature visible and near-infrared photoluminescence from black silicon has been observed. The black silicon is manufactured by shining femtosecond laser pulses on silicon wafers in air, which were later annealed in vacuum. The photoluminescence is quenched above 120 K due to thermalization and competing nonradiative recombination of the carriers. The photoluminescence intensity at 10K depends sublinearly on the excitation laser intensity confirming band tail recombination at the defect sites.
Crystalline silicon being ubiquitous throughout the microelectronics industry has an indirect bandgap, and therefore is incapable of light emission. However, strong room temperature visible and near-IR luminescence from non-crystalline silicon, e.g., amorphous silicon, porous silicon, and black silicon, has been observed. These silicon based materials are morphologically similar to each other, and have similar luminescence properties. We have studied the temperature dependence of the photoluminescence from these non-crystalline silicons to fully characterize and optimize these materials in the pursuit of obtaining novel optoelectronic devices.
Frontiers in Ultrafast Optics: Biomedical, Scientific, and Industrial Applications XV
8 February 2015 | San Francisco, California, United States
Frontiers in Ultrafast Optics: Biomedical, Scientific, and Industrial Applications XIV
2 February 2014 | San Francisco, California, United States
Frontiers in Ultrafast Optics: Biomedical, Scientific, and Industrial Applications XIII
3 February 2013 | San Francisco, California, United States
Frontiers in Ultrafast Optics: Biomedical, Scientific, and Industrial Applications XII
22 January 2012 | San Francisco, California, United States
Frontiers in Ultrafast Optics: Biomedical, Scientific, and Industrial Applications XI
23 January 2011 | San Francisco, California, United States
Frontiers in Ultrafast Optics: Biomedical, Scientific and Industrial Applications X (Formerly: Commercial and Biomedical Applications of Ultrafast Lasers)
24 January 2010 | San Francisco, California, United States
Commercial and Biomedical Applications of Ultrafast Lasers IX
25 January 2009 | San Jose, California, United States
Commercial and Biomedical Applications of Ultrafast Lasers VIII
20 January 2008 | San Jose, California, United States
Commercial and Biomedical Applications of Ultrafast Lasers VII
21 January 2007 | San Jose, California, United States
Commercial and Biomedical Applications of Ultrafast Lasers VI
22 January 2006 | San Jose, California, United States
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