The I-V and C-V–characteristics of the isotype Zn1-xCoxO/n-GaP heterojunction fabricated by spray pyrolysis of Zn1-xCoxO thin films on n-GaP crystalline substrates have been investigated and analyzed. The mechanisms of electron tunneling through the energy barrier of the heterojunction at forward and reverse currents and the conditions of generating reverse current are analyzed. The dynamics of changes in the capacitive parameters of Zn1-xCoxO thin film based on the C-V–characteristics is established. The photoelectric properties of the heterostructure are analyzed.
TiN thin films were deposited are deposited by DC reactive magnetron sputtering. The effect of annealing on the electrical and optical properties of the thin films was investigated. Temperature dependences of the resistance R of the TiN films were measured within the temperature range T ÷ 295-420 K. There was established that all samples under investigation had n-type of conductivity. Based on the dependences (αhν)2 = f(hν), the presence of direct allowed interband optical transitions in the TiN thin films is established and the optical band gap values before and after annealing are determined. Annealing in nitrogen atmospheres led to an increase in the optical width of the band gap, which may be due to deviations from the stoichiometric composition of thin TiN films during heat treatment.
The results of investigation of optical and electrical properties of p-Cu2FeSnS4 thin polycrystalline films obtained by spray pyrolysis of aqueous solutions of salts of CuCl2∙2H2O, FeCl3∙6H2O and SnCl4∙5H2O and (NH2)2CS are presented. On the basis of the analysis of the light absorption spectra, the optical band gap of the films Eg ≈ 1.72 eV was determined and the dynamics of its change during thermal treatment under low vacuum conditions (0.1 Pa). The conductivity activation energies (Ea = 0.75 eV) and the height of the energy barriers between the grain boundaries (Eb = 0.07 eV) are determined from the temperature dependences of the electrical conductivity.
This paper reports optical properties of n-type SnS2 thin films, prepared by spin-coating of a sol-gel based on the lowcost and environmentally friendly solvent dimethyl sulfoxide (DMSO). The effect of a short-term low-temperature treatment in air and final annealing under low vacuum (0.1 Pa) on the synthesis of tin disulfide films was tested and analyzed. The dynamics of changes of optical properties of the films on the parameters of spin-coating and heat treatment was established. The value of the band gap Eg ≈ 2.25 – 2.54 eV for SnS2 and Eg ≈ 1.99 eV for Sn2S3 was determined from the analysis of optical characteristics.
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