We demonstrate the 4-stage traveling wave photodetector (TWPD) with monolithically integrated bias circuitry network based on a silicon photonics process. A bias circuitry network comprised of inductors is integrated at the input terminal to provide the bias voltage for device while prevent the leak of the RF signal into the voltage circuitry. Experimentally, the maximum RF powers of load terminal are 8 dB higher than input end at high frequencies, validated the effectiveness of RF-choke.
Silicon nitride photonic integrated circuits with ultra-low loss are widely used in applications such as telecommunications and optical sensing. However, the radiation loss increases rapidly as the radius is reduced, resulting in large-sized silicon nitride photonic integrated circuits. The weak thermo-optical effect limits the high-efficiency, low-power consumption applications. In this paper, a stepped index waveguide structure is studied to reduce the bending loss by enhancing the mode confinement. A bend with a radius of 30μm is designed using Ansys MODE. Polymer with a high thermo-optic coefficient is used as the cladding of the silicon nitride waveguide to improve the tuning performance of the phase shifter. The grooves around the waveguide also acts as an adiabatic trench to increase the efficiency of the thermal electrode. A π phase shift under thermal tuned power of 7.5mW is achieved with a 300μm long silicon nitride waveguide. Finally, a cascaded silicon nitride micro-ring resonator with radius of 50μm is designed to achieve an efficient filter with a wide tuning range of 116nm. This scheme provides a novel approach for high-density, wide-tunable and miniaturized devices in silicon nitride photonic integrated circuits.
Base on Silicon-On-Insulator (SOI), we demonstrate and compare three O-band 8-channel (de-)multiplexers based on box-shaped AWG, freeform-shaped AWG and saddle-shaped AWG for the 400 GBASE-LR8 norms. The comparison results indicate that the box-shaped AWG with large channel crosstalk of 23.3 dB, well-matched channel spacing and the FSR is more advisable choice for the 50 Gb/s PAM4 signal adopted by the 400 GBASE-LR8 standards with bandwidth of 0.14 nm.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.