This paper reports the latest device performance of high-power blue and green edge-emitting Laser Diodes (LDs). The epitaxial layers of LDs were grown by Metal Organic Chemical Vapor Deposition (MOCVD) on C-plane free-standing GaN substrates. And a ridge type structure was formed at the top of p-type layers. Fabricated every LD chip was mounted on a heat sink using a junction down method in a TO-Φ9 mm package. We optimized the epitaxial and the device structures for high efficiency and high optical output power. A new developed 455 nm blue LD showed the optical output power and the voltage of 5.90 W and 3.81 V at the forward current of 3 A under Continuous Wave (CW) operation. The wall-plug efficiency (WPE) of the 455 nm blue LD was 51.6 % at 3 A. This is the highest WPE reported so far. The peak WPE of the 455 nm LD was 52.4 % at the forward current of 2.2 A. And a new developed 525 nm green LD showed the optical output power and the voltage of 1.86 W and 4.12 V at the forward current of 1.9 A under CW operation. The wall-plug efficiency (WPE) of the 525 nm green LD was 23.8 % at 1.9 A. This is the highest WPE reported so far. The peak WPE of the 525 nm LD was 25.9 % at the forward current of 1.1 A.
We demonstrated a room-temperature continuous-wave (CW) operation of the milliwatt-class single-mode blue and green VCSELs with epitaxially grown AlInN/GaN DBRs on c-plane GaN substrates. The emission wavelength and the threshold current of the blue VCSEL were 442.3 nm and 0.40 mA, respectively. The wall plug efficiency of the blue VCSEL was 13.6%, which is the highest value ever reported. Moreover, stable CW operation beyond 1,000 hours has been confirmed under 0.6 mW at 25 °C. Lasing yield in a 2 in. wafer was more than 80 percent at an average threshold current of 1 mA. Furthermore, we also succeeded in providing high performance green VCSELs. The emission wavelength and the threshold current of the green VCSELs were 514.9 nm and 2.8 mA, respectively. The optical output power was over 1.5 mW and the wall plug efficiency achieved 3.7%, which is the best record for GaN-based green VCSELs. These results will enhance the possibility of the practical use of blue and green VCSELs in the near future.
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