Reversible Addition Fragmentation Chain Transfer (RAFT) polymerization technology enables the production of
polymers possessing low polydispersity (PD) in high yield for many applications. RAFT technology also enables control
over polymer architecture. With synthetic control over these polymer characteristics, a variety of polymers can be
designed and manufactured for use in advanced electronic applications. By matching the specific RAFT reagent and
monomer combinations, we can accommodate monomer reactivity and optimize acrylate or methacrylate
polymerizations (193 and 193i photoresist polymers) or optimize styrenic monomer systems (248 nm photoresist
polymers) to yield polymers with PD as low as 1.05. For 193i lithography, we have used RAFT technology to produce
block copolymers comprising of a random "resist" block with composition and size based on conventional dry
photoresist materials and a "low surface energy" block The relative block lengths and compositions may be varied to
tune solution migration behavior, surface energy, contact angles, and solubility in developer. Directed self assembly is
proving to be an interesting and innovative method to make 2- and even 3-dimensional periodic, uniform patterns. Two
keys to acceptable performance of directed self assembly from block copolymers are the uniformity and the purity of the
materials will be discussed.
Reversible Addition Fragmentation Chain Transfer (RAFT) technology has been developed for use in producing high
yield low polydispersity (PD) polymers for many applications. RAFT technology is being used to produce low PD
polymers and to allow control of the polymer architecture. A variety of polymers are being synthesized for use in
advanced photoresists using this technique. By varying the RAFT reagent used we can modulate the system reactivity of
the RAFT reagent and optimize it for use in acrylate or methacrylate monomer systems (193 and 193i photoresist
polymers) or for use in styrenic monomer systems (248 nm photoresist polymers) to achieve PD as low as 1.05.
RAFT polymerization technology also allows us to produce block copolymers using a wide variety of monomers. These
block copolymers have been shown to be useful in self assembly polymer applications to produce unique and very small
feature sizes.
The mutual compatibilities of all the components within a single layer 193 photoresist are very important in order to
achieve low LWR and low defect count. The advent of immersion imaging demands an additional element of protection
at the solid/liquid interface. We have used RAFT technology to produce block copolymers comprising a random "resist"
block with composition and size based on conventional dry photoresist materials, and a "low surface energy" block for
use in 193i lithography. The relative block lengths and compositions may be varied to tune solution behavior, surface
energy, contact angles, and solubility in developer. The use of this technique will be explored to produce polymers used
in hydrophobic single layer resists as well as additives compatible with the main photoresist polymer.
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