KEYWORDS: Silicon carbide, Silicon, Chemical vapor deposition, Scanning electron microscopy, Nanolithography, Control systems, Etching, Oxides, Molecules, Silicon films
We have investigated the nanopore formation utilizing SiC/Si (001) heteroepitaxial growth. Inverse pyramidal pits were
produced by {111} faceted on the top of Si layer of Silicon on Insulator (001) substrate after SiC growth by using
CH3SiH3 pulse jet chemical vapor deposition. Randomly distributed nanopores with the size of ~10 nm were obtained
after dipped into BHF solution for etching the buried oxide layer through the top of the pit. It was found that the densities
of the pits and the nanopores strongly depend on the initial SiC nucleation density which can be controlled by the pulse
frequency and number of CH3SiH3 pulse jets.
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