We present simulations of the effects of dephasing on the shot
noise properties of mesoscopic coherent devices, such as chaotic
cavities and Aharonov-Bohm rings. We adopt a phenomenological
model that exploits the statistical nature of the dephasing
mechanism and is able to cover the intermediate regime between a
fully coherent and completely incoherent (i.e., semiclassical)
transport. By investigating conductance and noise properties as a
function of the dephasing length, we conclude that decoherence has
no specific effect on shot noise which can be distinguished from
the one it has on conductance. In addition, when a large number of
conducting channels is considered, semiclassical and quantum
behavior must converge, yielding as a consequence the independence
of DC and noise properties from dephasing.
The rich variety of noise properties that make the field of mesoscopic transport so fascinating is going to be shared with "common" VLSI devices. Typical MOSFETs used of present-day VLSI circuits and systems already have feature sizes smaller than what we usually consider mesoscopic devices. In this talk, we focus on shot noise of the drain and gate currents in nanoscale MOSFETs. The subject is of interest from the point of view of applications, since adequate models of noise in such MOSFETs are required, especially for high-frequency analog and mixed-signal applications, and from the point of view of the understanding of the underlying physics, since effects typical of mesoscopic devices can now be observed at room temperature and in silicon.
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