Sebastiano Brida, Lorenza Ferrario, Flavio Giacomozzi, Domenico Giusti, Vittorio Guarnieri, Benno Margesin, Giorgio Pignatel, Giovanni Soncini, Alexey Vasil'ev, Giovanni Verzellesi, Mario Zen
KEYWORDS: Silicon, Gas sensors, Resistors, Temperature metrology, Dielectrics, Semiconductors, Low pressure chemical vapor deposition, Numerical simulations, Sensors, Chemical elements
We report on the design, fabrication, and characterization of a microheater module for chemoresistive, metal-oxide semiconductor gas sensors, consisting of a dielectric stacked membrane, micromachined from bulk silicon and with an embedded polysilicon resistor heater. Fabricated structures exhibit excellent heating efficiency, requiring only 30 mW to achieve a temperature of 500 C. Measured electrothermal characteristics are in good agreement with the outcomes of 3D numerical simulations.
Angelo Alessandrello, Chiara Brofferio, David Camin, C. Cattadori, Oliviero Cremonesi, Ettore Fiorini, Andrea Giuliani, A. Maglione, Benno Margesin, Angelo Nucciotti, Maura Pavan, Gianluigi Pessina, Giorgio Pignatel, Ezio Previtali, Luigi Zanotti
We are developing Si-implanted thermistors to realize high resolution microcalorimeters. We plan to use these devices in an experiment for the determination of the neutrino mass. The measure implies the evaluation of the correct end-point energy of a beta spectrum with a calorimetric approach. Our study is devoted to outline the optimum fabrication process concerning performances and reproducibility. For such reasons we have realized Si thermistors with different concentration of dopant impurities and with different implant geometries. Tests are performed between 4.2 and 1.2 K using a pumped helium cryostat, and selected samples are characterized at very low temperatures in a dilution refrigerator. Good reproducibility of the devices is necessary for producing an array of detectors. At the same time suitable electronics are developed to optimize the detectors preamplifiers link: minimization of the parasitic capacitance is necessary to reduce the integration of signal and to maximize the speed response of the detector.
A new reactor--namely Select from Watkins Johnson--which is capable to deposit thick films of doped and undoped silicon oxide by low temperature oxidation (T < 500 degree(s)C) from silane and oxygen, has been used to realize 6 micrometers thick silica waveguides which are three- modal at a wavelength of 1.15 micrometers with an attenuation loss better than 1.0 dB/cm on as deposited film.
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