The semiconductor industry is currently transitioning to advanced extreme-ultraviolet lithography (EUVL) to address the challenges facing the use of photolithography in microprocessor and memory chip integration. This shift has sparked a surge in novel inorganic EUV photoresist research. However, several technical issues, such as insufficient EUV sensitivity, poor understanding of the photochemistry, and poor stability, have emerged. Here, we synthesized [(BuSn)12O14(OH)6](CH3C6H4SO3)2 (TinTos) as a standard EUV photoresist. Chemical analysis (PXRD, NMR) was performed to confirm that the synthesized TinTos was well reproduced. As a result of EUV exposure, TinTos showed low sensitivity compared to the dose required in industry (<50 mJ/cm2). However, no enhancement in the DUV sensitivity was observed for TinTos after PEB. Consequently, we anticipate less time-dependent behavior of TinTos.
Extreme ultraviolet (EUV) lithography offers finer patterning with a 13.5nm wavelength light source, surpassing ArF immersion lithography. However, EUV photoresist (PR) faces challenges such as low etch resistance and patterning issues due to high line edge roughness (LER). In this study, we investigated the effects of CS2 plasma treatment and subsequent annealing on the properties of EUV PR during CF4/Ar plasma etching. CS2 plasma treatment and CS2 plasma treatment followed by annealing improved the etch resistance of PR by reducing ΔLER, ΔCritical dimension, and ΔThickness compared to untreated or annealed PR. X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy revealed the formation of C-S and O=S bonds on CS2 plasma-treated EUV PR, contributing to these improvements.
Block copolymers (BCPs) are consisted of at least two types of monomers which have covalent bonding. One of the widely investigated BCPs is polystyrene-block-polydimethylsiloxane (PS-b-PDMS), which is used as an alternative patterning method for various deep nanoscale devices due to its high Flory-Huggins interaction parameter (χ), such as optical devices and transistors, replacing conventional photolithography. As an alternate or supplementary nextgeneration lithography technology to extreme ultraviolet lithography (EUVL), BCP lithography utilizing the DSA of BCP has been actively studied. However, the nanoscale BCP mask material is easily damaged by the plasma and has a very low etch selectivity over bottom semiconductor materials, because it is composed of polymeric materials even though it contains Si in PDMS. In this study, an amorphous carbon layer (ACL) was inserted as a hardmask material between BCP and materials to be patterned, and, by using O2 plasmas, the characteristics of dry etching of ACL for high aspect ratio (HAR) using a 10 nm PDMS pattern were investigated. The results showed that, by using a PS-b-PDMS pattern with an aspect ratio of 0.3~0.9:1, a HAR PDMS/ACL double layer mask with an aspect ratio of ~10:1 could be fabricated. In addition, by the optimization of the plasma etch process, ACL masks with excellent sidewall roughness (SWR,1.35 nm) and sidewall angle (SWA, 87.9˚) could be fabricated.
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