Advances in diamond turning technology have offered optical designers new degrees of freedom in beam shaping optics.
While designers have these new manufacturing methods at their disposal, they may not be aware of special process
limitations and cost drivers. The purpose of this paper is to present some of these critical manufacturing issues. We will
discuss briefly special beam shaping optic types and applications. Then in more detail we will discuss the four key
diamond turning techniques and the types of optics they can produce. These four key manufacturing techniques are:
standard 2 axis diamond turning, slow tool servo, fast tool servo, micromilling. During the discussion we will present
surface shapes, process limitations, as well as cost drivers for each technique. In summary will we present this data in a
matrix that will aid the designer in selecting manufacturing techniques and optic types.
Continuous monitoring of high power (above 2 kW) CO2 laser beams with camera based systems has not been effective because beam sampling optics have not been available. Camera based systems allow real-time imaging of the entire beam profile which in turn enables real-time tuning and alignment of the laser, as well as enabling instantaneous recognition of beam misalignment in the optical delivery train. Spiricon and II-VI have jointly developed a new method
for in-line, passive sampling and beam profiling of high power, multi-kilowatt CO2 lasers. The system uses conventional optics in a novel sampling arrangement, coupled to a Spiricon Pyroelectric IR Camera and Laser Beam Analysis
software.
Birefringence is an important factor in determining the imaging quality of visible and infrared optical systems. This paper presents residual birefringence data obtained at 0.6328 micrometers and 10.591 micrometers from several ZnSe and multispectral grade ZnS windows. Refractive index inhomogeneity tests were also performed on the samples at 0.6328 micrometers and their results are given. Residual birefringence data at 0.6328 micrometers is compared to data at 10.591 micrometers .
Cadmium telluride is the primary choice for electro-optic modulator applications in the mid infrared region
- particularly at 10.6 micron. In principle, single crystal CdTe in the rest state is only weakly birefringent along the
{1 1O} planes. Some internal birefringence does exist, however, due to fabricated-in stress birefringence and
birefringence associated with slippage of the crystal along the {1 1 1} planes. When a voltage is applied to a CdTe
crystal, the total phase shift introduced by the crystal is a result of the combination of the electro-optic effect and the
residual birefringence. This paper will present a method of measuring the phase shift produced by residual birefringence
in CdTe modulators at 10.6 micron. The test method is a modification of the crossed polarizer technique. Test results
will be presented for CdTe modulators with voltage and without voltage.
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