Silicon nitride waveguide based photonic integrated circuits (PICs) are intensively investigated for a wide range of sensing applications in the visible to sub 1-µm near-infrared spectral region. The monolithic co-integration of silicon photodiodes and read-out electronics offers additional benefits in terms of performance and miniaturization. We discuss challenging aspects related to the efficient coupling and routing of light to, from, and within PICs and present interfacing photonic building blocks offering potential solutions. We demonstrate the suitability of these interfacing building blocks by using them for the realization of a PIC-based multi-channel optical coherence tomography concept at 840 nm.
In this paper, we report our recent advances in the development of CMOS compatible PECVD silicon nitride waveguide based photonic key building blocks for optical coherence tomography (OCT) in the 850 nm wavelength region and for biosensing applications in the visible domain around 650 nm wavelength. We discuss the design and experimental verification of compact low-loss waveguide bends, broadband couplers with varying power splitting ratios required for PIC based OCT systems, arrayed waveguide gratings for spectral domain OCT, and a monolithically integrated optically pumped organic solid-state laser for low-cost biosensing applications.
We report several PECVD silicon nitride photonic building blocks required for the implementation of a CMOS-compatible photonic integrated circuit technology platform operating in the 850 nm and 600 nm wavelength domain. In particular, for the 850 nm wavelength region we discuss a low-loss broadband 1x2 power splitter and a loop mirror. In the 600 nm wavelength region, we present new results on an optically pumped integrated dye-doped polymer laser that couples its light directly into a silicon nitride waveguide. Moreover, we discuss design considerations for a waveguide based gas sensing concept detecting target gas specific absorption changes in a thin dye-doped polymer cladding layer.
We report the simulation, design and experimental validation of various PECVD silicon nitride photonic building blocks required for the implementation of a CMOS-compatible photonic integrated circuit technology platform operating in the 850 nm and 600 nm wavelength domain. In particular, we discuss an inverted taper structure for efficient coupling of light to and from the chip, propagation and bend losses as well as broadband power and polarization beam splitters in the 850 nm region. In the 600 nm wavelength region, we demonstrate the realization of an optically pumped integrated dye-doped polymer laser that couples its laser light directly into a silicon nitride waveguide.
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