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Fatemeh Sangghaleh
at KTH Royal Institute of Technology
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Publications (1)
Proceedings Article | 22 May 2013 Paper
Optical absorption cross section and quantum efficiency of a single silicon quantum dot
F. Sangghaleh, B. Bruhn, I. Sychugov, J. Linnros
Proceedings Volume 8766, 876607 (2013) https://doi.org/10.1117/12.2017483
KEYWORDS: Silicon, Luminescence, Absorption, Quantum efficiency, Quantum dot light emitting diodes, Reactive ion etching, Nanocrystals, Quantum dots, Electron beam lithography, Avalanche photodetectors
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