As Moore’s Law intensifies the demand for higher transistor density, photoresists grapple with challenges posed by shorter wavelengths, especially in speed and stochastic factors. We aim to address these by molecularly optimizing photosensitive materials for precise control at molecular level. Our approach employs sequence-defined polypeptoids, specifically tailored to integrate metal atoms with high EUV absorption, improving both stochastic properties and photoresist sensitivity. Through the sub-monomer peptoid synthesis, we've crafted materials embedding acid-labile groups like tert-butyloxycarbonyl (tBOC) derivatives for solubility switch and 8-hydroxyquinoline derivatives for metal binding. Our in-depth study into peptoid structures and their metal atom positioning offers insights for future lithography techniques. Our ongoing efforts focus on refining these sequences and fine-tuning the exposure process, showcasing our commitment to advancing EUV lithography's capabilities.
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