Strained silicon is applied to the transistor channel of leading-edge CMOS devices, significantly increasing carrier
mobility and requiring measurement techniques to characterize strain. In the investigation reported here, we apply
Raman spectroscopy using excitation by both visible and UV light in conjunction with finite-element analysis to analyze
the strain distribution adjacent to embedded silicon-germanium (SiGe) line structures in silicon wafers. In agreement
with the modeling results, a strong strain depth gradient is obtained for the silicon lines, whereas the strain within the
SiGe regions depends weakly on the depth. We show further how the stress tensor and its distribution in both SiGe and
Si regions is modified when changing the geometry of the line structures. For the strained Si line region, a sensitive
dependence of the stress state on the geometry is obtained.
Total reflection X-ray fluorescence (TXRF) is a useful tool for rapid, nondestructive monitoring of implant doses in semiconductor manufacturing. For As-doped (10 keV and 80 keV) Si wafers with an implant dose of 3 X 1015 at/cm2, As fluorescence yield and accumulated As+ dose measured by Secondary Ion Mass Spectroscopy (SIMS) have been compared. This comparison between TXRF and SIMS demonstrates the power of TXRF as a new nondestructive technique for in-line shallow implant dose and profile monitoring.
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