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Dr. Eduardo P. Alves
at Univ Técnica de Lisboa
SPIE Involvement:
Author
Publications (1)
Proceedings Article | 26 February 2016 Paper
Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells
K. Lorenz, A. Redondo-Cubero, M. Lourenço, M. Sequeira, M. Peres, A. Freitas, L. Alves, E. Alves, M. Leitão, J. Rodrigues, N. Ben Sedrine, M. Correia, T. Monteiro
Proceedings Volume 9748, 97480L (2016) https://doi.org/10.1117/12.2211429
KEYWORDS: Annealing, Ion implantation, Light emitting diodes, Radiation effects, Indium gallium nitride, Polarization, Optical properties, Metalorganic chemical vapor deposition, Quantum wells, Gallium nitride, Luminescence, Indium nitride, Ions, Stereolithography, Nitrogen
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