Thermally activated delayed fluorescent (TADF) OLEDs promise higher luminous efficiency than traditional OLEDs but suffer from a shorter lifetime, so identifying the degradation mechanisms is crucial to find a solution. In-depth electrical characterization of TADF devices during stressing at constant current revealed a shift in capacitance onset due to the formation of interfacial trap states. Simulations showed that this shift depends on the voltage applied before performing the C-V scan and that the emptying of trap states due to Shockley-Read-Hall recombination caused the shift.
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