We report on the epi-design and characterisation of VCSELs for atomic sensors, including miniaturised clocks and magnetometers. To understand how epi-design impacts device performance and separate this from effects of growth and fabrication, we employ techniques to study the interplay between optically-active gain medium and the cavity-resonance. We experimentally determine the net modal-gain spectrum of VCSEL material using a single-pass stripe-length method covering the range of pumping and hence gain requirements of VCSELs. This is compared to photovoltage spectroscopic measurements, which are used to determine the quantum well transition energies and cavity resonance, aiding further optimisation of device design.
We report on a study using VCSEL Quick Fabrication (VQF) devices for the rapid assessment of epitaxial structures designed for emission at 894nm grown on 100mm substrates. A comparison of measured VQF device results to the epitaxial design specification allows for the extraction of key variances across the wafer and the identification of their potential causes. We also demonstrate the applicability of this technique for the assessment of uniformity and reproducibility of 150mm VCSEL wafers for emission at 940nm, identifying the potential sources for observed variations in device performance that impact in specification device yield.
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