Prof. David J. Mowbray Profile

Prof. David J. Mowbray

at Univ of Sheffield

SPIE Involvement:

Author

Publications (15)

Proceedings Article | 2 March 2020 Paper

GaAsP nanowires containing intentional and self-forming quantum dots

H. Aruni Fonseka, Anton Velichko, Yunyan Zhang, George Davis, James Gott, Tillmann Godde, Ana Sanchez, Richard Beanland, Huiyun Liu, David Mowbray

Proceedings Volume 11291, 112910J (2020) https://doi.org/10.1117/12.2543747

KEYWORDS: Quantum wells, Gallium arsenide, Nanowires, Quantum dots, Crystals, Active optics, Heterojunctions, Gallium, Transmission electron microscopy, Scanning transmission electron microscopy

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Proceedings Article | 4 March 2019 Presentation

GaAs/GaAsP nanowires containing quantum wells or dots for high-efficiency light-emitters (Conference Presentation)

David Mowbray

Proceedings Volume 10929, 1092906 (2019) https://doi.org/10.1117/12.2508558

KEYWORDS: Nanowires, Quantum wells, Quantum efficiency, Gallium arsenide, Quantum dots, Single photon, Quantum dot light emitters, Optical resonators, Laser applications, Molecular beam epitaxy

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Proceedings Article | 15 March 2016 Paper

Analysing radiative and non-radiative recombination in InAs QDs on Si for integrated laser applications

Jonathan Orchard, Chris Woodhead, Samuel Shutts, Jiang Wu, Angela Sobiesierski, Rob Young, Richard Beanland, Huiyun Liu, Peter Smowton, David Mowbray

Proceedings Volume 9758, 975809 (2016) https://doi.org/10.1117/12.2209693

KEYWORDS: Quantum dots, Luminescence, Silicon, Instrument modeling, Indium arsenide, Laser applications, Silicon photonics, Integrated optics, Electronic components, Data transmission, Annealing, Gallium arsenide, Semiconductor lasers, Laser damage threshold, Interfaces

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Proceedings Article | 27 February 2015 Paper

Optimising the defect filter layer design for III/V QDs on Si for integrated laser applications

Jonathan Orchard, Jiang Wu, Siming Chen, Qi Jiang, Thomas Ward, Richard Beanland, Huiyun Lui, David Mowbray

Proceedings Volume 9373, 93730G (2015) https://doi.org/10.1117/12.2076601

KEYWORDS: Silicon, Gallium arsenide, Annealing, Semiconductor lasers, Optical filters, Transmission electron microscopy, Luminescence, Laser applications, Superlattices, Excitons

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Proceedings Article | 27 February 2015 Paper

Optical characterisation of catalyst free GaAsP and GaAsP core-shell nanowires grown directly on Si substrates by MBE

Jonathan Orchard, Yunyan Zhang, Jiang Wu, Huiyun Liu, David Mowbray

Proceedings Volume 9373, 937308 (2015) https://doi.org/10.1117/12.2079263

KEYWORDS: Gallium arsenide, Silicon, Gallium, Scanning electron microscopy, Solids, Molecular beam epitaxy, Crystals, Luminescence, Zinc, Nanowires

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Proceedings Article | 29 January 2008 Paper

High-performance 1300-nm InAs/GaAs quantum-dot lasers

H. Y. Liu, M. Hopkinson, K. Groom, R. Hogg, D. Mowbray

Proceedings Volume 6909, 690903 (2008) https://doi.org/10.1117/12.765735

KEYWORDS: Gallium arsenide, Indium gallium arsenide, Scanning probe lithography, Indium arsenide, Modulation, Doping, Laser damage threshold, Continuous wave operation, Quantum dots, Temperature metrology

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Proceedings Article | 11 January 2008 Paper

Effects of spacer growth temperature on the optical properties of quantum dot laser structures

N. Hasbullah, J. S. Ng, H. Y. Liu, M. Hopkinson, J. P. David, T. Badcock, D. Mowbray, A. Sanchez, R. Beanland

Proceedings Volume 6800, 68000U (2008) https://doi.org/10.1117/12.759663

KEYWORDS: Electroluminescence, Temperature metrology, Gallium arsenide, Quantum wells, Indium arsenide, Transmission electron microscopy, Quantum dots, Gallium, Quantum dot lasers, Optical properties

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Proceedings Article | 22 March 2007 Paper

Maximising the gain: optimizing the carrier distribution in InGaAs quantum dot lasers

Peter Smowton, Ian Sandall, David Mowbray, Hui-Yun Liu, Mark Hopkinson

Proceedings Volume 6468, 646817 (2007) https://doi.org/10.1117/12.702733

KEYWORDS: Absorption, Semiconducting wafers, Transparency, Quantum dots, Indium gallium arsenide, Quantum dot lasers, Gallium arsenide, Temperature metrology, Doping, Laser damage threshold

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Proceedings Article | 9 February 2007 Paper

Charging and spin-polarization effects in InAs quantum dots under bipolar carrier injection

A. Tartakovskii, A. Savelyev, M. Makhonin, M. Skolnick, D. Mowbray, M. Maximov, V. Ustinov, R. Seisyan

Proceedings Volume 6471, 64710J (2007) https://doi.org/10.1117/12.697151

KEYWORDS: Excitons, Polarization, Picosecond phenomena, Quantum dots, Electrons, Indium gallium arsenide, Gallium arsenide, Indium arsenide, Semiconductors, Carrier dynamics

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Proceedings Article | 14 April 2006 Paper

High performance 1.3μm InAs/GaAs quantum dot lasers with low threshold current and negative characteristic temperature

H. Liu, T. Badcock, K. Groom, M. Hopkinson, M. Gutiérrez, D. Childs, C. Jin, R. Hogg, I. Sellers, D. Mowbray, M. Skolnick, R. Beanland, D. Robbins

Proceedings Volume 6184, 618417 (2006) https://doi.org/10.1117/12.662499

KEYWORDS: Gallium arsenide, Indium arsenide, Continuous wave operation, Laser damage threshold, Modulation, Doping, Scanning probe lithography, Coating, Quantum dots

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Proceedings Article | 22 February 2006 Paper

Characterisation of modulation doped quantum dot lasers

Peter Smowton, Ian Sandall, Craig Walker, John Thomson, Angela Sobiesierski, Tom Badcock, David Mowbray, Hui-Yun Liu, Mark Hopkinson

Proceedings Volume 6133, 61330T (2006) https://doi.org/10.1117/12.650682

KEYWORDS: Doping, Transparency, Absorption, Quantum dots, Modulation, Quantum wells, Laser damage threshold, Gallium, Semiconductor lasers, Gallium arsenide

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Proceedings Article | 1 April 2005 Paper

Growth and characterization of multiple layer quantum dot lasers

Peter Smowton, Craig Walker, Ian Sandall, Ian Sellers, David Mowbray, Hui-Yun Liu, Marina Gutierrez, Mark Hopkinson

Proceedings Volume 5738, (2005) https://doi.org/10.1117/12.593278

KEYWORDS: Gallium arsenide, Absorption, Gallium, Quantum dots, Transmission electron microscopy, Quantum wells, Multilayers, Quantum dot lasers, Laser damage threshold, Semiconductor lasers

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Proceedings Article | 16 June 2004 Paper

Dynamics of stimulated emission in InAs quantum dot laser structures measured in pump-probe experiments

Alexander Tartakovskii, Kristian Groom, Ali Adawi, Aristide Lemaître, David Mowbray, Maurice Skolnick, Mark Hopkinson

Proceedings Volume 5352, (2004) https://doi.org/10.1117/12.527694

KEYWORDS: Picosecond phenomena, Photons, Indium arsenide, Gallium arsenide, Quantum dot lasers, Laser beam diagnostics, Ultrafast phenomena, Optical amplifiers, Transparency, Quantum dots

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Proceedings Article | 6 August 1999 Paper

Characterization of the effects of Al incorporation in AlGaInP light emitters

Paul Mogensen, Peter Blood, G. Jones, Stephen Bland, N. Cain, D. Peggs, David Mowbray

Proceedings Volume 3625, (1999) https://doi.org/10.1117/12.356907

KEYWORDS: Aluminum, Statistical analysis, Luminescence, Doping, Temperature metrology, Light emitting diodes, X band, Heterojunctions, Gallium arsenide, Time metrology

Proceedings Article | 2 May 1997 Paper

Optical spectroscopic determination of the electronic band structure of bulk AlGaInP and GaInP-AlGaInP heterojunction band offsets

David Mowbray, Olgierd Kowalski, John Cockburn, Maurice Skolnick, Mark Hopkinson, John David

Proceedings Volume 3001, (1997) https://doi.org/10.1117/12.273781

KEYWORDS: Quantum wells, Aluminum, Electrons, Heterojunctions, Luminescence, Optical spectroscopy, Spectroscopy, Absorption, Gallium, Gallium arsenide

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Showing 5 of 15 publications

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