Dr. Daniel Franta Profile

Dr. Daniel Franta

at Masaryk Univ

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Publications (12)

Proceedings Article | 26 April 2016 Paper

Optical characterization of SiO2 thin films using universal dispersion model over wide spectral range

Daniel Franta, David Nečas, Ivan Ohlídal, Angelo Giglia

Proceedings Volume 9890, 989014 (2016) https://doi.org/10.1117/12.2227580

KEYWORDS: Silica, Thin films, Thin film devices, Optical constants, Ellipsometry, Spectrophotometry, Ultraviolet radiation, Instrument modeling, Spectral models, Optical properties, Product engineering, Optical components, Refractive index, Absorption, Reflectivity, Data modeling, Infrared spectroscopy, Atomic force microscopy

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Proceedings Article | 24 September 2015 Paper

Possibilities and limitations of imaging spectroscopic reflectometry in optical characterization of thin films

Miloslav Ohlídal, Ivan Ohlidal, David Nečas, Jiří Vodák, Daniel Franta, Pavel Nádaský, František Vižd'a

Proceedings Volume 9628, 96280R (2015) https://doi.org/10.1117/12.2191052

KEYWORDS: Thin films, Intelligence systems, Reflectance spectroscopy, Spectroscopy, Reflectometry, Imaging spectroscopy, Reflectivity, Ellipsometry, CCD cameras, Spectroscopic ellipsometry

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Proceedings Article | 24 September 2015 Paper

Wide spectral range characterization of antireflective coatings and their optimization

Daniel Franta, David Nečas, Ivan Ohlídal, Jiří Jankuj

Proceedings Volume 9628, 96280F (2015) https://doi.org/10.1117/12.2190109

KEYWORDS: Data modeling, Refractive index, Silica, Infrared spectroscopy, Spectroscopy, Ellipsometry, Silicon, Optical coatings, Systems modeling, Instrument modeling

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Proceedings Article | 24 September 2015 Paper

Dispersion model for optical thin films applicable in wide spectral range

Daniel Franta, David Nečas, Ivan Ohlídal, Angelo Giglia

Proceedings Volume 9628, 96281U (2015) https://doi.org/10.1117/12.2190104

KEYWORDS: Absorption, Refractive index, Electronics, Dielectrics, Phonons, Ultraviolet radiation, Europium, Infrared spectroscopy, Spectroscopy, Electrons

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Proceedings Article | 24 September 2015 Paper

Simultaneous determination of optical constants, local thickness, and local roughness of thin films by imaging spectroscopic reflectometry

David Nečas, Ivan Ohlídal, Jiří Vodák, Miloslav Ohlídal, Daniel Franta

Proceedings Volume 9628, 96280C (2015) https://doi.org/10.1117/12.2190091

KEYWORDS: Intelligence systems, Spectroscopy, Reflectance spectroscopy, Imaging spectroscopy, Gallium arsenide, Refractive index, Data processing, Thin films, Spectroscopic ellipsometry, Atomic force microscopy

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A new optical characterization method based on imaging spectroscopic reflectometry (ISR) is presented and illustrated on the characterization of rough non-uniform epitaxial ZnSe films prepared on GaAs substrates. The method allows the determination of all parameters describing the thin films exhibiting boundary roughness and non-uniformity in thickness, i.e. determination of the spectral dependencies of the optical constants, map of local thickness and map of local rms values of heights of the irregularities for the rough boundaries. The local normal reflectance spectra in ISR correspond to small areas (37×37 μm²) on the thin films measured within the spectral range 270{900 nm by pixels of a CCD camera serving as the detector of imaging spectrophotometer constructed in our laboratory. To our experience the small areas corresponding to the pixels are sufficiently small so that the majority of the films can be considered uniform in all parameters within these areas. Boundary roughness is included into the reflectance formulas by means of the scalar diffraction theory (SDT) and the optical constant spectra of the ZnSe films were expressed by the dispersion model based on the parametrization of the joint density of electronic states (PJDOS). In general, there is a correlation between the searched parameters if the individual local reflectance spectra are fitted separately and, therefore, the local reflectance spectra measured for all the pixels are treated simultaneously using so called multi-pixel method in order to remove or reduce this correlation and determine the values of all the parameters with a sufficient accuracy. The results of the optical characterization of the same selected sample of the epitaxial ZnSe thin film obtained using the method presented here and combined method of variable-angle spectroscopic ellipsometry, spectroscopic reflectometry and single-pixel immersion spectroscopic reflectometry are introduced in the contribution as well.

Proceedings Article | 5 October 2005 Paper

Characterization of optical thin films exhibiting defects

Daniel Franta, Ivan Ohlídal

Proceedings Volume 5963, 59632H (2005) https://doi.org/10.1117/12.625371

KEYWORDS: Thin films, Refractive index, Chalcogenides, Glasses, Reflection, Reflectivity, Transmittance, Electronics, Matrices, Dielectrics

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Proceedings Article | 14 February 2005 Paper

Optical measurement of mechanical stresses in diamond-like carbon films

Ivan Ohlidal, Miloslav Ohlidal, Daniel Franta, Vladimir Cudek, Vilma Bursikova, Petr Klapetek, Milos Jakl

Proceedings Volume 5776, (2005) https://doi.org/10.1117/12.611744

KEYWORDS: Interferometry, Chromatic aberrations, Silicon, Thin films, Silicon films, Reflectance spectroscopy, Refractive index, Plasma enhanced chemical vapor deposition, Crystals, Spectroscopy

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Proceedings Article | 29 September 2004 Paper

Mechanical stresses studied by optical methods in diamond-like carbon films containing Si and O

Ivan Ohlidal, Miloslav Ohlidal, Daniel Franta, Vladimir Cudek, Vilma Bursikova, Martin Siler

Proceedings Volume 5527, (2004) https://doi.org/10.1117/12.562136

KEYWORDS: Silicon, Silicon films, Silicon carbide, Carbon, Chemical species, Spherical lenses, Crystals, Reflectance spectroscopy, Thin films, Methane

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Proceedings Article | 19 November 2003 Paper

Optical characterization of ZnSe thin films

Daniel Franta, Ivan Ohlidal, Petr Klapetek, Alberto Montaigne-Ramil, Alberta Bonanni, David Stifter, Helmut Sitter

Proceedings Volume 4829, (2003) https://doi.org/10.1117/12.530775

KEYWORDS: Thin films, Gallium arsenide, Plasma physics, Molecular beam epitaxy, Crystals, Laser crystals, Dielectrics, Plasma, Spectroscopic ellipsometry, Zinc

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Proceedings Article | 7 March 2001 Paper

Calculation of the optical quantities characterizing inhomogeneous thin films using a new mathematical procedure based on the matrix formalism and Drude approximation

Daniel Franta, Ivan Ohlidal

Proceedings Volume 4356, (2001) https://doi.org/10.1117/12.417829

KEYWORDS: Refractive index, Thin films, Multilayers, Chemical elements, Reflectivity, Transmittance, Dielectrics, Metrology, Magnetism, Differential equations

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Proceedings Article | 14 July 1999 Paper

Comparison of optical and nonoptical methods for measuring surface roughness

Ivan Ohlidal, Miloslav Ohlidal, Daniel Franta, Miroslav Tykal

Proceedings Volume 3820, (1999) https://doi.org/10.1117/12.353100

KEYWORDS: Surface roughness, Silicon, Profilometers, Interferometry, Reflectivity, Statistical analysis, Light scattering, Near field optics, Spectrophotometry, Microscopes

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Proceedings Article | 19 August 1996 Paper

Method of shearing interferometry for characterizing non-Gaussian randomly rough surfaces

Ivan Ohlidal, Miloslav Ohlidal, Daniel Franta, A. Michalek

Proceedings Volume 2775, (1996) https://doi.org/10.1117/12.246771

KEYWORDS: Glasses, Diffusers, Interferometry, Microscopes, Image processing, Statistical analysis, CCD cameras, Solids, Image analysis, Fourier transforms

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Showing 5 of 12 publications

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