Dr. Daniel Burt Profile

Dr. Daniel Burt

at Nanyang Technological Univ

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Publications (5)

Proceedings Article | 5 March 2022 Presentation + Paper

1D photonic crystal GeSn-on-insulator nanobeam laser

Hyo-Jun Joo, Youngmin Kim, Daniel Burt, Yongduck Jung, Lin Zhang, Melvina Chen, Samuel Jior Parluhutan, Dong-Ho Kang, Chulwon Lee, Simone Assali, Zoran Ikonic, Oussama Moutanabbir, Yong-Hoon Cho, Chuan Seng Tan, Donguk Nam

Proceedings Volume 12006, 120060L (2022) https://doi.org/10.1117/12.2608589

KEYWORDS: Photonic crystals, Raman spectroscopy, Tin, Photonic integrated circuits, Germanium, Silicon, Scanning electron microscopy, Lasers

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Proceedings Article | 5 March 2022 Presentation + Paper

Improved GeSn microdisk lasers directly sitting on Si

Youngmin Kim, Simone Assali, Daniel Burt, Yongduck Jung, Hyo-Jun Joo, Melvina Chen, Zoran Ikonic, Oussama Moutanabbir, Donguk Nam

Proceedings Volume 12006, 120060M (2022) https://doi.org/10.1117/12.2610599

KEYWORDS: Silicon, Germanium, Tin, Optical simulations, Reactive ion etching, Photonic integrated circuits, Finite element methods, Thermography, Semiconductor lasers, Device simulation

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Proceedings Article | 5 March 2022 Presentation + Paper

Strain engineering for pseudo-magnetic fields in graphene

Manlin Luo, Hao Sun, Zhipeng Qi, Kunze Lu, Melvina Chen, Dongho Kang, Youngmin Kim, Daniel Burt, Xuechao Yu, Chongwu Wang, Young Duck Kim, Hong Wang, Qi-Jie Wang, Donguk Nam

Proceedings Volume 12003, 1200305 (2022) https://doi.org/10.1117/12.2609933

KEYWORDS: Graphene, Raman spectroscopy, Optoelectronic devices

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Proceedings Article | 5 March 2022 Presentation + Paper

Tensile-strained direct bandgap GeSnOI micro/nanostructures by harnessing residual strain

Daniel Burt, Hyo-Jun Joo, Youngmin Kim, Yongduck Jung, Melvina Chen, Manlin Luo, Dong-Ho Kang, Simone Assali, Lin Zhang, Bongkwon Son, Weijun Fan, Oussama Moutanabbir, Zoran Ikonic, Chuan Seng Tan, Yi-Chiau Huang, Donguk Nam

Proceedings Volume 12006, 1200605 (2022) https://doi.org/10.1117/12.2608742

KEYWORDS: Tin, Nanowires, Germanium, Raman spectroscopy, Transmission electron microscopy, Silicon, Nanolithography, Luminescence, Laser applications, Semiconductor lasers

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Proceedings Article | 27 July 2016 Presentation

Design and optimisation of suspended strained germanium membranes for near-infrared lasing (Conference Presentation)

Daniel Burt, Waseem Aldeek, Osamah Aldaghri, Zoran Ikonic, Oswaldo Querin, Robert Kelsall

Proceedings Volume 9891, 98910O (2016) https://doi.org/10.1117/12.2227622

KEYWORDS: Germanium, Semiconductor lasers, Silicon, Absorption, Integrated circuits, Silicon photonics, Transceivers, Optical pumping, Chemical vapor deposition, Annealing

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The development of a semiconductor laser compatible with silicon substrates and high-volume silicon integrated circuit manufacturing is a key requirement for monolithic silicon photonic transceivers. Tensile strained germanium is a promising material system which meets these criteria, and both optically pumped and electrically injected lasing have been reported[1,2]. It is well established that growth of thick (~1 micron) layers of germanium on silicon substrates by two-stage chemical vapour deposition followed by thermal annealing results in nearly-relaxed germanium with a residual biaxial tensile strain of typically 0.15-0.25% [3]. Several researchers have investigated methods of amplifying this built-in strain in order to increase the attainable optical gain. Increased uniaxial strain levels have been demonstrated in suspended linear bridge structures created by wet chemical underetching. However, uniaxial strain is less effective than biaxial strain in converting germanium from an indirect to a direct gap semiconductor and hence generating substantial optical gain. In this work, we have computationally investigated and optimised two-dimensional patterning and under-etching of germanium membranes in order to achieve biaxial strain amplification. Strain simulations were carried out using finite element methods and the shape of the suspended germanium structures was optimised to achieve the highest tensile strain whilst remaining below the empirically determined yield strength of the thin membranes. The net optical gain distribution across the membrane was calculated using 8 band k.p bandstructure to determine the full interband gain, the inter-valence-band absorption and the intervalley and intravalley phonon- and impurity-assisted free carrier absorption. Band-gap narrowing effects were included using empirical data. Biaxial strain values of ~1% can be achieved in the lasing region of the structure, which, although below the level required to convert germanium to a direct band-gap material, nonetheless result in net optical gain with practical (mid 1019cm-3) n-type doping densities, for a range of electrical injection conditions. References 1.J Liu et al, Opt. Lett 35 679 (2010) 2. R Camacho-Aguilera et al, Opt. Express 20 11316 (2012) 3. R Camacho-Aguilera et al, Appl. Phys. Lett 102 152106 (2013)

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