Mr. Curt Allen Jackson Profile

Curt Allen Jackson

Engineering Director at Tekscend Photomask US Inc

SPIE Involvement:

Author

Proceedings Article | 5 November 2005 Paper

Pattern fidelity performance from next-generation DUV laser lithography on 65nm masks and wafers

Robert Kiefer, Peter Buck, Vishal Garg, Jason Hickethier, Curt Jackson, John Manfredo, Cris Morgante, Paul Allen, Michael White

Proceedings Volume 5992, 59920U (2005) https://doi.org/10.1117/12.632227

KEYWORDS: Photomasks, Deep ultraviolet, Artificial intelligence, Printing, Metals, Lithography, Semiconducting wafers, Bragg cells, Evolutionary algorithms, Optical alignment

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Proceedings Article | 28 June 2005 Paper

Print characterization of photomasks from next-generation deep-ultra-violet laser pattern generator

Curt Jackson, Robert Kiefer, Peter Buck, David Mellenthin, John Manfredo, Vishal Garg, Jason Hickethier, Sarah Cohen, Cris Morgante, Paul Allen, Eric Christenson, Michael White

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617524

KEYWORDS: Photomasks, Deep ultraviolet, Semiconducting wafers, Printing, Objectives, Diffractive optical elements, Bragg cells, Vestigial sideband modulation, Image enhancement, Optical proximity correction

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Proceedings Article | 12 May 2005 Paper

Enhancement of the image fidelity and pattern accuracy of a DUV laser generated photomask through next-generation hardware

Robert Kiefer, Curt Jackson, Vishal Garg, David Mellenthin, John Manfredo, Peter Buck, Sarah Cohen, Cris Morgante, Paul Allen, Michael White

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.600368

KEYWORDS: Photomasks, Deep ultraviolet, Image enhancement, Objectives, Diffractive optical elements, Bragg cells, Optical proximity correction, Metals, Optical lithography, Control systems

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Proceedings Article | 6 December 2004 Paper

Next-generation DUV ALTA mask patterning capabilities

Paul Allen, Michael Bohan, Eric Christenson, H. Christopher Hamaker, Sam Howells, Boaz Kenan, Peter Pirogovsky, Malik Sadiq, Robin Teitzel, Michael White, Michael Ungureit, Alan Wickstrom, Robert Kiefer, Curt Jackson

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.570291

KEYWORDS: Photomasks, Deep ultraviolet, Semiconducting wafers, Reticles, Lithography, Vestigial sideband modulation, Signal detection, Artificial intelligence, Servomechanisms, Mirrors

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Proceedings Article | 20 August 2004 Paper

Imaging properties of a leading-edge DUV laser generated photomask

Curt Jackson, Peter Buck, Sarah Cohen, Vishal Garg, Jason Hickethier, Charles Howard, Robert Kiefer, Matt Lamantia, John Manfredo, James Tsou

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557720

KEYWORDS: Deep ultraviolet, Photomasks, Lithography, Semiconducting wafers, Manufacturing, Lithographic illumination, Electron beam lithography, Solids, Tolerancing, Vestigial sideband modulation

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Proceedings Article | 28 May 2004 Paper

Conversion from 50 KeV to DUV mask writer for 90-nm technology critical layers

Dongsung Hong, Prakash Krishnan, Dianna Coburn, Mary Zawadzki, Yonghong Yang, Kent Green, Peter Buck, Curt Jackson, Larry Martinez

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.535882

KEYWORDS: Photomasks, Deep ultraviolet, Semiconducting wafers, Optical proximity correction, Lithography, Electron beam lithography, Error control coding, Metals, Laser systems engineering, Binary data

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One of Cypress’ primary goals for 90-nm generation mask strategy is to control mask costs while not compromising on performance. One key objective is to replace the use of 50-ke V electron beam pattern generation with DUV laser mask lithography where possible. The higher productivity of the DUV laser systems compared to the 50Ke V e-beam platforms offers a unique opportunity for mask cost reduction. Compared to previous i-line generations of laser lithography systems, the DUV laser systems provide significantly improved resolution and pattern fidelity that more closely approaches that of ebeam lithography. We have previously published experimental results demonstrating that the difference in fidelity on the mask between the laser and EB platforms does not always translate to a measurable difference in wafer litho performance or even more importantly to a measurable difference in electrical performance. Through this work, Cypress was able to eliminate the use of 50Ke V ebeam writers for all of their 130nm technology node layers. In some cases the improved performance of the DUV tools was sufficient to replace i-line produced masks where wafer performance was marginal without having to resort to EB lithography. This study addresses the conversion of 50Ke V ebeam layers to DUV laser platform specifically for the critical layers of the Cypress’ 90nm Technology node. EB lithography was originally specified for these layers as a conservative approach in part due to the timing of 90-nm technology development relative to the maturation of the DUV laser mask lithography process. In this study, the electrical performance and wafer yield are evaluated for equivalency in order to take advantage of the lower cost and faster cycletime that use of a ALTA DUV system provides over the 50Ke V VSB systems. In addition, the wafer OPC is not changed between the two mask writing systems in order to allow interchangeable use of the two writing systems if the experimental results indicated no difference in wafer performance.

Proceedings Article | 28 May 2004 Paper

DUV laser lithography for photomask fabrication

Curt Jackson, Peter Buck, Sarah Cohen, Vishal Garg, Charles Howard, Robert Kiefer, John Manfredo, James Tsou

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.534575

KEYWORDS: Deep ultraviolet, Photomasks, Lithography, Manufacturing, Thin film coatings, Vestigial sideband modulation, Critical dimension metrology, Photoresist processing, Image enhancement, Printing

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Proceedings Article | 24 May 2004 Paper

Qualification of a low-cost high-quality reticle process for 90-nm contact layers

Kirk Strozewski, Joe Perez, Rusty Carter, Robert Kiefer, Curt Jackson, Susan MacDonald, Franklin Kalk

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.536712

KEYWORDS: Photomasks, Reticles, Deep ultraviolet, Semiconducting wafers, Electron beam lithography, Mask making, Optical lithography, Semiconductors, Lithography, Inspection

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Proceedings Article | 17 December 2003 Paper

DUV laser lithography for photomask fabrication

Curt Jackson, Peter Buck, Sarah Cohen, Vishal Garg, Charles Howard, Robert Kiefer, John Manfredo, James Tsou

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518269

KEYWORDS: Deep ultraviolet, Photomasks, Lithography, Manufacturing, Thin film coatings, Vestigial sideband modulation, Photoresist processing, Critical dimension metrology, Inspection, Printing

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Proceedings Article | 17 December 2003 Paper

DUV mask writer for BEOL 90-nm technology layers

Dongsung Hong, Prakash Krishnan, Dianna Coburn, Nazneen Jeewakhan, Shengqi Xie, Joshua Broussard, Bradley Ferguson, Kent Green, Peter Buck, Curt Jackson, Larry Martinez

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518051

KEYWORDS: Photomasks, Deep ultraviolet, Semiconducting wafers, Metals, Vestigial sideband modulation, Reticles, Optical proximity correction, Back end of line, Critical dimension metrology, Cadmium

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Proceedings Article | 28 August 2003 Paper

Semi-aqueous solvent applications for 193-nm EAPSM resist strip

Julio Reyes, Curt Jackson, Laurent Dieu, William Bowers, Russell Stevens

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504265

KEYWORDS: Reflectivity, Photomasks, Scanning probe microscopy, Chlorine, Photoresist processing, Etching, Phase shifts, Fluorine, Contamination, Phase measurement

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Proceedings Article | 27 December 2002 Paper

Influence of the baking process for chemically amplified resist on CD performance

Shiho Sasaki, Takeshi Ohfuji, Masa-aki Kurihara, Hiroyuki Inomata, Curt Jackson, Yoshio Murata, Daisuke Totsukawa, Naoko Tsugama, Naoki Kitano, Naoya Hayashi, David Hwang

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.468089

KEYWORDS: Critical dimension metrology, Photoresist processing, Chemically amplified resists, Infrared cameras, Photomask technology, Temperature metrology, Optical lithography, Diffusion, Cameras, FT-IR spectroscopy

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Proceedings Article | 27 December 2002 Paper

PEC fogging effect analysis using high-performance EB simulator capable of large-area mask pattern simulation

Naoko Kuwahara, Takeshi Ohfuji, Naoya Hayashi, Curt Jackson, Naoki Kitano, David Hwang

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.468466

KEYWORDS: Monte Carlo methods, Cadmium sulfide, Convolution, Photomasks, Lithography, Chemical analysis, Diffusion, Interfaces, Computer simulations, Optical simulations

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Showing 5 of 13 publications

Conference Committee Involvement (1)

Photomask and Next Generation Lithography Mask Technology XIV

17 April 2007 | Yokohama, Japan

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