Position errors in reticles come from many sources; the writers play the most important influence on them. Several methods can be used for position error monitoring, such as registration / mask-to-mask overlay measurement for global position errors and writer deflector monitoring for local position errors. Getting smaller and smaller image placement and overlay of writers shown for advanced products, therefore, mask shops need advanced tools and methods to monitor conveniently and quickly. The Local Registration (LREG) function be created for this project, 1500 positions (in 15 x 15 μm2 area) can be measured in less than 15 minutes by the function. Not only the health of the beam deflector but also the stitching condition of the writer could be obtained by the function. Moreover, the function would be extended for global registration and mask-to-mask overlay monitoring and compared to conventional (standard measurement) methods.
In the research, we describe a method that can well control the mean-to-target (MTT) difference in the critical dimension (CD) of the reticle. It is called the multi-etched (or re-etched) process, re-etched process will separate the conventional dry-etched process into two steps. The major purpose of the first etching is takeout the absorber layer and get preliminary CD results (line/width are less than but close to the design target), and the function of the second etched process (re-etched) can precisely control CD results to match design target. On the re-etched process, not only MTT difference but also CD uniformity will be improved. Therefore, the re-etched process might be a method to well control CD performance (i.e., MTT and uniformity) of the reticle for mask shop application.
Deep-ultraviolet (DUV) laser writer ALTA4700DP upgraded from ALTA4700. The new design laser mask pattern
generator (LMPGs), advance electronic design automation (EDA), and multi-core CPU server (up to hundreds of core)
are all constructed on the machine. The effective of machine (exposure time) and CD performance (uniformity, thr-pitch and corner rounding) of products are obvious reduced and improved, respectively.
In research, not only the CD performance of mask was obtained by CD-SEM but also the CD performance of wafer
was defined by AIMS simulation. The effect of corner rounding was proved by average CD and exposure intensity of
contact structure by both CD-SEM measurement and AIMS simulation.
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