We demonstrate a novel optical phased array (OPA) technology of all-solid state LiDAR module in autonomous vehicles. The OPA chip is designed a reflective structure with electro-optical modulation phase array. A key feature of this design is to apply the reflective multi-dielectric layer and bipolar NPN electronic control structure in each nano-resonator. The result enables to exhibit wide FOV of 30° × 30° and high-resolution of 0.2° × 0.2° at estimation rate of 1GHz to adjust independently the amplitude. The newly developed OPA chip is beneficial for using in 3D sensing, optical communication, and biomedical imaging.
We demonstrate a record gain of 11.4-dB for 300-nm broadband single-mode Cr-doped crystalline core fibers (SMCDCCFs) employing a novel growth of smaller core. The gain-per-unit-length efficiency of the SMCDCCF is 38-dB/m, which is much higher than current Er and Bi-doped fibers of 0.3 dB/m. The record gain achieved is mainly due to constantly maintain conical molten-zone shape in growth process to fabricate a smaller core of 15-µm and a longer fiber length of 30-cm.
In this study, we propose and demonstrate a reflex optical phased array (OPA) chip, represents the most advanced optical scanning component of the third-generation LiDAR, and it has competitive advantages. The result showed the two-dimensional control of free-space optical fields at a wavelength of 1,550 nm at a 100 kHz modulation speed, which used dielectric thin film of SiN with an electro-optic response, realizing programmable space-variant control of optical wavefronts in a 32 × 4 pixel array at high speed. The 2D beam steering around a 30° × 2.5° field of view with the beam widths of 1.0° × 0.6°. We will provide custom solid-state LiDARs to clients, and these LiDARs will be more cost-effective than the commercial LiDAR products and will become more receptive by the autonomous vehicle market.
Homoepitaxial and heteroepitaxial ZnO films were grown by plasma-assisted molecular beam epitaxy (P-MBE). Homoepitaxial ZnO layers were grown on an O-face melt-grown ZnO (0001) substrate. Heteroepitaxial ZnO layers were grown on an epitaxial GaN template predeposited by metalorganic chemical vapor deposition on a c-plane sapphire substrate. There exists a residual strain in the heteroepitaxial ZnO, which is ε = -0.25%. Low-intensity excitation PL spectra of ZnO epilayers excited by a He-Cd laser exhibit only bound-exciton emission with phonon replicas. The quality of ZnO epilayers is better than that of ZnO substrate. However, under high-intensity excitation by a N2 laser, the emission due to exciton-exciton collisions dominates the PL spectrum from heteroepitaxial ZnO layer but is not observed from homoepitaxial ZnO layer.
Incorporation of a few percent of nitrogen into conventional III-V compounds to form III-N-V alloys such as GaNAs and GaNP leads to a large reduction of the fundamental band gap. We show experimentally and theoretically that the effect originates from an anti-crossing interaction between the extended conduction-band states and a narrow resonant band formed by localized N states. The interaction significantly alters the electronic band structure by splitting the conduction band into two nonparabolic subbands. The downward shift of the lower conduction subband edge is responsible for the N-induced reduction of the fundamental band-gap energy.
We have obtained GaInNAs/GaAs quantum wells with emission at 1.3 micrometer at room temperature. We also show that another novel material InNAsP grown on InP is a viable material for long-wavelength lasers. The maximum temperature of operation for an InNAsP/GaInAsP microdisk laser is 70 degrees Celsius, which is about 120 degrees Celsius higher than that of a similar laser fabricated from GaInAs/GaInAsP. The characteristic temperature To of the former is 97 K, also higher than that of the latter.
To implmenet millimeter wave photonic links using high speed optical modulators, bandwidth and modulation efficiency are important considerations. In this paper we discuss design and fabrication of novel traveling-wave multiple quantum well (MQW) electro-absorption modulator structures which can be used for wide-band applications, covering dc to 40 GHz or higher frequencies, that promise to provide better bandwidth and efficiency than conventional lumped modulators. From the microwave point of view, traveling wave modulators are constant impedance transmission lines, and are not limited by the RC roll off associated with modulator capacitance. Their sensitivity can be increased by increasing device length without significantly sacrificing the bandwidth. The principal bandwidth limitation comes from microwave loss. In this work, ridge co-planar waveguide structures were designed and fabricated to achieve good impedance matching, low microwave loss, low dispersion and reasonable phase velocity matching between lightwave and microwave. Two port measurements for these waveguides were performed up to 40 GHz with a network analyzer. The results show effective microwave index in the range of 4.5 to 3.6 (which is close to the effective index of the guided light wave), characteristic impedance around 30 Omega, microwave attenuation less than 6 dB/mm at 40 GHz and low dispersion. These characteristics are all promising for wide band high efficiency traveling wave modulators.
Efficient InAsP/GaInP multiple-quantum-well electroabsorption waveguide modulators have been developed at 1.3 micrometers wavelength. The modulators exhibit a typical fiber-to-fiber optical insertion loss of 7 dB, a slope efficiency of 1.0 V-1, and an optical saturation intensity in excess of 10 mW. The 3 dB electrical bandwidth is dictated by the device capacitance and a 13 GHz bandwidth has been measured for a 3 micrometers wide 180 micrometers long modulator. In a microwave photonic link without amplification, a RF link gain as high as -31 dB is achieved at 0.9 mA photodetector current and 1 GHz subcarrier modulation frequency.
To implement millimeter wave photonic links using high speed optical modulators, RF input efficiency to the modulator is an important consideration. In this paper we discuss design and fabrication of ultra high speed multiple quantum well electro-absorption modulators for narrow band applications up to 40 GHz. In order to obtain higher RF efficiency at working frequencies of 20 GHz, 25 GHz and 40 GHz, modulators with monolithically integrated matching circuits were designed and fabricated utilizing co-planar waveguide MMIC technologies. Measurement results show excellent matching at specific frequencies with S11 of -16 dB for the 20 GHz devices, -20 dB for the 25 GHz devices and -36 dB for the 40 GHz devices. At least 6 dB of improvement on optical modulation efficiency can be expected over modulators without impedance matching.
The strained InAsP/InP system can be a viable alternative material to the quaternary InGaAsP on InP because the composition and thickness of InAsP can be controlled independently in gas- source MBE and because strain could provide another degree of freedom in device design. We have developed an in situ technique for composition determination in InAsP and have shown that InAsP/InP (100) strained multiple quantum wells exhibit quantum-confined Stark effect in the 1.3 micrometers region. The existence of an internal piezoelectric field in InAsP/InP (111)B strained single quantum wells is demonstrated by the blue energy shift from carrier screening in photoluminescence spectra.
Growth of InAs epitaxial layers on GaAs (001 ) by migration-enhanced
epitaxy (MEE) and molecular beam epitaxy (MBE) has been studied. Reflection
high-energy-electron diffraction (RHEED) patterns were studied, and persistent
RHEED intensity oscillations were observed during MEE growth of InAs. The
dependence of RHEED oscillation on MEE growth parameters is discussed.
InAs layers grown by MEE at low substrate temperature exhibit comparable
quality as MBE layers grown at higher substrate temperature.
Excitonic effects associated with subband dispersion and subband mixing have been investigated
using photoluminescence excitation spectroscopy at liquid helium temperatures. A wide energy range has
been studied in high quality AlGa1As/GaAs superlattices (SL's) by tunable cw dye lasers. Series of SL's
grown by molecular beam epitaxy (MBE) have been designed with constant well widths and aluminum
concentrations while the barrier widths (Lb's) vary. Each SL series has been carefully designed to produce
a broad range of subband dispersion. We have observed significant changes in the excitonic spectra of the
n=1 heavy hole (1HH), light hole (1LH), and n=2 heavy hole (2HH), as the Lb's vary. In particular, a
wealth of excitonic peaks and structures were observed in the vicinity of the 2HH excitons within a certain
range of Lb's in our SL samples. These arise from band mixing between 1LH and 2HH in conjunction
with subband-dispersion associated excitonic effects. The observed lineshapes were compared with
computer generated curves based on a comprehensive exciton theory. We also report observations of
pronounced line narrowing effects in a SL. The linewidths of the 1HH and 1LH exciton peaks decrease
significantly as the Lb's decrease. This narrowing can be explained with a theory which incorporates
combined effects of well-to-well coupling and layer width irregularities.
We study resonant and nonresonant hole tunneling in an asymmetric double quantum well structure by picosecond timeresolved
photoluminescence. The tunneling times are directly determined by studying the luminescence decay time in one
of the wells. Various hole levels in the two quantum wells are brought in resonance by applying an electric field to the
doped layers which clad the inirinsic region containing the quantum well structures. The luminescence decay shows a sharp
resonance due to tunneling of carriers when two heavy-hole levels are brought in resonance. The tunneling time at
resonance, however, is much longer than expected from a simple theoretical model assuming a coherent tunneling process.
We develop a quantitative theory of resonant tunneling under the influence of scattering and relaxation processes. The
results predict large increases in the tunneling times in good agreement with the experimental observations.
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