We report temporal coherence measurement of solid-target plasma-based soft X-ray laser (XRL) in amplified spontaneous emission (ASE) mode. By changing the XRL pumping angle, we generate lasing at two-times higher electron density than the routine condition. A relatively shorter coherence time at a higher pumping angle indicates a clear spectral signature of higher electron density in the gain region. We probe the amplification dynamics of XRL in routine, and high electron density conditions to confirm gain-duration reduction resulting from ionization gating in the latter case. We also present recent results on the seeding of a vortex beam carrying orbital angular momentum (OAM) in XRL plasma. A small part of the high topological charge extreme ultraviolet (EUV) vortex is injected in XRL. These preliminary results suggest that the vortex seed indeed can be efficiently amplified. In the end, we propose a pathway towards the seeding of the complete vortex beam and wavefront characterization of the amplified beam.
We present an experimental intensity and wavefront characterization of the infrared vortex driver as well as the extreme ultraviolet vortex obtained through high harmonic generation in an extended generation medium. In a loose focusing geometry, an intense vortex beam obtained through phase-matched absorption-limited high harmonic generation in a 15 mm long Argon filled gas-cell permits single-shot characterization of the vortex structure. Moreover, our study validates the multiplicative law of momentum conservation even for such an extended generation medium.
In this study, we presented high-performance flexible organic light-emitting diodes (FOLEDs); to do so, we prepared
indium-tin oxide (ITO) thin layers by ion beam sputtering (IBS) on polyethylene terephtalate (PET) substrates in soft
low temperature conditions. The IBS technology seems well adapted to us to adjust the conduction level of the interface
films to the one of the various organic materials making up the fabrication processes of the organic optoelectronic
components; moreover this technique does not require a high substrate temperature or an annealing after ITO deposition
to crystallize the obtained layers. Because of the great number of deposition parameters (oxygen flow, substrate
temperature, deposition rate...) playing interdependent roles and strongly influencing the electrical, optical and structural
properties of the layers, we optimized the effects of these different parameters separately by using electrical and optical
characterizations as well as X-ray diffraction analyses. The performances of FOLEDs on PET substrate with different
ITO thicknesses were investigated and compared to the ones of a conventional organic light-emitting diode realized on
glass substrate and according to the same device configuration.
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