Dr. Binita Tongbram Profile

Dr. Binita Tongbram

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Publications (6)

Proceedings Article | 9 September 2019 Paper

Influence of quaternary (In0.21Al0.21Ga0.58As) capping on the performance of InAs quantum dot infrared photodetector

Ravinder Kumar, Debiprasad Panda, Debabrata Das, Jhuma Saha, Binita Tongbram, Subhananda Chakrabarti

Proceedings Volume 11085, 110851K (2019) https://doi.org/10.1117/12.2529887

KEYWORDS: Quantum dots, Gallium arsenide, Indium arsenide, Photodetectors, Infrared radiation, Heterojunctions, Aluminum, Gallium

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Proceedings Article | 28 May 2019 Presentation + Paper

MBE-grown InGaAs/GaAs quantum-dots on Ge substrate: An idea towards optoelectronic integration on silicon

Raman Kumar, Ravinder Kumar, Debiprasad Panda, Jhuma Saha, Binita Tongbram, Debabrata Das, Sourabh Upadhyay, Arka Chatterjee, Samir Kumar Pal, Subhananda Chakrabarti

Proceedings Volume 10929, 109290C (2019) https://doi.org/10.1117/12.2508464

KEYWORDS: Heterojunctions, Germanium, Gallium arsenide, Quantum dots, Silicon, Optical properties, Optoelectronics integration, Luminescence, Optoelectronic devices

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Proceedings Article | 4 March 2019 Presentation + Paper

MBE-grown GaAs/AlGaAs multiple quantum wells on Ge substrate

Raman Kumar, Ravinder Kumar, Debiprasad Panda, Binita Tongbram, Subhananda Chakrabarti

Proceedings Volume 10929, 1092905 (2019) https://doi.org/10.1117/12.2508508

KEYWORDS: Quantum wells, Germanium, Gallium arsenide, Silicon, Nanostructures, Interfaces, X-ray diffraction, Gallium, Annealing, Heterojunctions

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Proceedings Article | 15 March 2016 Paper

Diffusion impact on thermal stability in self-assembled bilayer InAs/GaAs quantum dots (QDs)

B. Tongbram, Navneet Sehara, Jashan Singhal, Debabrata Das, D. Panda, S. Chakrabarti

Proceedings Volume 9758, 97580T (2016) https://doi.org/10.1117/12.2211749

KEYWORDS: Diffusion, Quantum dots, Annealing, Luminescence, Vertical cavity surface emitting lasers, Indium arsenide, Crystals, Gallium arsenide, Transmission electron microscopy, Chemical species

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Proceedings Article | 15 March 2016 Paper

A detailed investigation of strain patterning effect on bilayer InAs/GaAs quantum dot with varying GaAs barrier thickness

B. Tongbram, N. Sehara, J. Singhal, D. Panda, S. Chakrabarti

Proceedings Volume 9758, 975802 (2016) https://doi.org/10.1117/12.2212767

KEYWORDS: Gallium arsenide, Atomic force microscopy, Raman spectroscopy, Transmission electron microscopy, X-ray diffraction, Optical properties, Crystals, Indium arsenide, Phonons, Quantum dots, Optical lithography

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Proceedings Article | 27 February 2015 Paper

Cross-sectional TEM (XTEM) analysis for vertically-coupled quaternary In0.21Al0.21Ga0.58As capped InAs/GaAs quantum dot infrared photodetectors

Binita Tongbram, Hemant Ghadi, Sourav Adhikary, Arjun Mandal, Subhananda Chakrabarti

Proceedings Volume 9373, 93730S (2015) https://doi.org/10.1117/12.2074835

KEYWORDS: Gallium arsenide, Transmission electron microscopy, Quantum dots, Heterojunctions, Infrared photography, Infrared radiation, Photodetectors, Indium arsenide, Quantum well infrared photodetectors, Optical properties

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Showing 5 of 6 publications

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