3D imaging LADARs have emerged as the key technology for producing high-resolution imagery of targets in 3-dimensions (X and Y spatial, and Z in the range/depth dimension). Ball Aerospace & Technologies Corp. continues to make significant investments in this technology to enable critical NASA, Department of Defense, and national security missions. As a consequence of rapid technology developments, two issues have emerged that need resolution. First, the terminology used to rate LADAR performance (e.g., range resolution) is inconsistently defined, is improperly used, and thus has become misleading. Second, the terminology does not include a metric of the system’s ability to resolve the 3D depth features of targets. These two issues create confusion when translating customer requirements into hardware. This paper presents a candidate framework for addressing these issues. To address the consistency issue, the framework utilizes only those terminologies proposed and tested by leading LADAR research and standards institutions. We also provide suggestions for strengthening these definitions by linking them to the well-known Rayleigh criterion extended into the range dimension. To address the inadequate 3D image quality metrics, the framework introduces the concept of a Range/Depth Modulation Transfer Function (RMTF). The RMTF measures the impact of the spatial frequencies of a 3D target on its measured modulation in range/depth. It is determined using a new, Range-Based, Slanted Knife-Edge test. We present simulated results for two LADAR pulse detection techniques and compare them to a baseline centroid technique. Consistency in terminology plus a 3D image quality metric enable improved system standardization.
We introduce the Network Photonics’ CrossWave as the first commercially-available, MEMS-based wavelength selective switch. The CrossWave combines the functionality of signal de-multiplexing, switching and re-multiplexing in a single all-optical operation using a dispersive element and 1-D MEMS. 1-D MEMS, where micromirrors are configured in a single array with a single mirror per wavelength, are fabricated in a standard surface micromachining process. In this paper we present three generations of micromirror designs. With proper design optimization and process improvements we have demonstrated exceptional mirror flatness (<16.2m-1 curvature), surface error (
Thy monolithic integration of MicroElectroMechanical Systems (MEMS) with the driving, controlling, and signal processing electronics promises to improve the performance of micromechanical devices as well as lower their manufacturing, packaging, and instrumentation costs. Key to this integration is the proper interleaving, combining, and customizing of the manufacturing processes to produce functional integrated micromechanical devices with electronics. We have developed a MEMS-first monolithic integrated process that first seals the micromechanical devices in a planarized trench and then builds the electronics in a conventional CMOS process. To date, most of the research published on this technology has focused on the performance characteristics of the mechanical portion of the devices, with little information on the attributes of the accompanying electronics. This work attempts to reduce this information void by presenting the results of SPICE Level 3 and BSIM3v3.1 model parameters extracted for the CMOS portion of the MEMS-first process. Transistor-level simulations of MOSFET current, capacitance, output resistance, and transconductance versus voltage using the extracted model parameters closely match the measured data. Moreover, in model validation efforts, circuit-level simulation values for the average gate propagation delay in a 101-stage ring oscillator are within 13 - 18% of the measured data. These results establish the following: (1) the MEMS-first approach produces functional CMOS devices integrated on a single chip with MEMS devices and (2) the devices manufactured in the approach have excellent transistor characteristics. Thus, the MEMS-first approach renders a solid technology foundation for customers designing in the technology.
Conference Committee Involvement (5)
Laser Radar Technology and Applications XIV
15 April 2009 | Orlando, Florida, United States
Laser Radar Technology and Applications XIII
19 March 2008 | Orlando, Florida, United States
Laser Radar Technology and Applications XII
11 April 2007 | Orlando, Florida, United States
Laser Radar Technology and Applications XI
19 April 2006 | Orlando (Kissimmee), Florida, United States
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