We present a novel hybrid laser structure based on III-V and II-VI compounds combining some advantages of type I and type II heterojunctions in one heterostructure. Such design allows the achievement of large energy offsets at the interface in the conduction and the valence band exceeding of 1.0 eV in order to provide good electron and hole confinement. P-AlAsSb/n-InAs/N-Cd(Mg)Se laser heterostructures were grown on p-InAs substrates by original technology of MBE method in two separate growth chambers consequently. Photoluminescence spectra included tow emission bands at hv=0.41 eV and hv=2.08 eV associated with InAs and CdMgSe bulk recombination transitions, respectively. Intense electroluminescence was observed at (lambda) =2.73micrometers (77K) and (lambda) =3.12micrometers (300K). Weak temperature dependence of spontaneous emission indicated the effective carrier confinement in the InAs layer due to large potential barriers ((Delta) sEc=1.28eV and (Delta) EV=1.68eV). Proposed hybrid III-V/II-VI heterostructure is very promising for creation the mid-infrared lasers with improved performances operating in the spectral range of 3- 5micrometers .
We have proposed a new physical approach to design mid-IR lasers based on type II heterostructures with strong asymmetric band offset confinement at the interface. It allows to create the high barriers for carriers and to reduce leakage current from an active region, that leads to increase the quantum efficiency of the emission due to the strong accumulation of recombining carriers. Here this approach was successfully used for fabrication high power lasers operating at (lambda) equals 3.26 micrometers . The laser structure containing narrow-gap active InGaAsEb (Eg equals 0.380 eV) layer and wide-gap confined InAsSbP (Eg equals 0.520 eV) and GaInAsSb (Eg equals 0.640 eV) layers lattice-matched to InAs substrate was grown by LPE. Such heterostructure has the band energy diagram with strong asymmetric band offsets and allows to provide high barriers for electrons at the InGaAsSb/GaInAsSb heterointerface ((Delta) Ec equals 0.60 eV) and for holes at the InGaAsSb/InAsSbP one ((Delta) Ev equals 0.15 eV). Maximum output power of 1.5 W was achieved in pulsed mode with pulse duration 1 microsecond(s) and repetition rate 100 Hz for 100 micrometers broad area laser with cavity length about of 1000 micrometers . Threshold current density was about 450 A/cm2. Characteristic temperature T0 equals 47 K was observed in the range of 77 - 140 K.
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