Dr. Andrew Burbine Profile

Dr. Andrew Burbine

Product Engineer at Siemens EDA

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Author

Publications (14)

Proceedings Article | 22 November 2023 Presentation

Application of SONR for a better OPC model with a EUV curvilinear photomask

Chih-I Wei, Rehab Ali, Andrew Burbine, Fan Jiang, Germain Fenger, Seulki Kang, Kotaro Maruyama, Yuichiro Yamazaki, Sujan Sarkar, Matteo Beggiato, Youssef Drissi, Werner Gillijns, Christophe Beral, Sandip Halder, Gian Lorusso, Philippe Leray

Proceedings Volume PC12751, PC127510Q (2023) https://doi.org/10.1117/12.2687822

KEYWORDS: Optical proximity correction, Photomasks, Extreme ultraviolet, Calibration, Semiconducting wafers, Scanning electron microscopy, Printing, Modeling, Machine learning, Data modeling

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Proceedings Article | 4 April 2019 Paper

Using machine learning in the physical modeling of lithographic processes

Kostas Adam, Shashidhara Ganjugunte, Clement Moyroud, Kostya Shchehlik, Michael Lam, Andrew Burbine, Germain Fenger, Yuri Granik

Proceedings Volume 10962, 109620F (2019) https://doi.org/10.1117/12.2519848

KEYWORDS: Neural networks, Machine learning, Systems modeling, Optical proximity correction, Data modeling, Process modeling, Calibration, Lithography, Cadmium, Coastal modeling

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Proceedings Article | 20 March 2019 Presentation + Paper

Process window-based feature and die failure rate prediction

John Sturtevant, Lianghong Yin, Young Chang Kim, Shumay Shang, Andrew Burbine, Chris Clifford, Kostas Adam

Proceedings Volume 10962, 109620B (2019) https://doi.org/10.1117/12.2516101

KEYWORDS: Failure analysis, Critical dimension metrology, Lithography, Logic, Manufacturing, Photomasks, Error analysis, Stochastic processes, Visualization, Optical proximity correction

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Proceedings Article | 28 September 2017 Paper

Aerial image metrology for OPC modeling and mask qualification

Ao Chen, Yee Mei Foong, Thomas Thaler, Ute Buttgereit, Angeline Chung, Andrew Burbine, John Sturtevant, Chris Clifford, Kostas Adam, Peter De Bisschop

Proceedings Volume 10446, 104460V (2017) https://doi.org/10.1117/12.2281886

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SPIE Journal Paper | 19 June 2017

Image-based pupil plane characterization via a space-domain basis

Zac Levinson, Andrew Burbine, Erik Verduijn, Obert Wood, Kenneth Goldberg, Markus Benk, Antoine Wojdyla, Bruce Smith

JM3, Vol. 16, Issue 02, 023509, (June 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.2.023509

KEYWORDS: Systems modeling, Data modeling, Lithography, Tolerancing, Binary data, Photomasks, Image transmission, Semiconductors, Reticles

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Proceedings Article | 24 March 2017 Presentation + Paper

Effective use of aerial image metrology for calibration of OPC models

Ao Chen, Yee Mei Foong, Thomas Thaler, Ute Buttgereit, Angeline Chung, Andrew Burbine, John Sturtevant, Chris Clifford, Kostas Adam, Peter DeBisschop

Proceedings Volume 10147, 101470Y (2017) https://doi.org/10.1117/12.2258632

KEYWORDS: Photomasks, Optical proximity correction, Data modeling, Metrology, 3D modeling, Semiconducting wafers, Photoresist materials, Calibration, Wafer-level optics, Image processing, Scanners

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Proceedings Article | 20 October 2016 Paper

Bayesian analysis for OPC modeling with film stack properties and posterior predictive checking

Andrew Burbine, Germain Fenger, John Sturtevant, David Fryer

Proceedings Volume 10032, 100320N (2016) https://doi.org/10.1117/12.2249680

KEYWORDS: Optical proximity correction, Semiconducting wafers, Data modeling, Refractive index, Calibration, Statistical modeling, Photomasks, Process modeling, Lithography, Monte Carlo methods

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Proceedings Article | 18 March 2016 Paper

Image-based pupil plane characterization via principal component analysis for EUVL tools

Zac Levinson, Andrew Burbine, Erik Verduijn, Obert Wood, Pawitter Mangat, Kenneth Goldberg, Markus Benk, Antoine Wojdyla, Bruce Smith

Proceedings Volume 9776, 977618 (2016) https://doi.org/10.1117/12.2219745

KEYWORDS: Principal component analysis, Extreme ultraviolet lithography, Metrology, Extreme ultraviolet, Image processing, Systems modeling, Photomasks, Data modeling, Lithography, Interferometry, Monochromatic aberrations, Computer simulations, Detection and tracking algorithms, Semiconductors

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Proceedings Article | 15 March 2016 Paper

Bayesian inference for OPC modeling

Andrew Burbine, John Sturtevant, David Fryer, Bruce Smith

Proceedings Volume 9780, 97800I (2016) https://doi.org/10.1117/12.2219707

KEYWORDS: Data modeling, Optical proximity correction, Bayesian inference, Lithography, 3D modeling, Calibration, Metrology

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Proceedings Article | 18 March 2015 Paper

Akaike information criterion to select well-fit resist models

Andrew Burbine, David Fryer, John Sturtevant

Proceedings Volume 9427, 94270J (2015) https://doi.org/10.1117/12.2085770

KEYWORDS: Data modeling, Calibration, Statistical modeling, Mathematical modeling, Optical proximity correction, Photoresist materials, Process modeling, Systems modeling, Stochastic processes, Visualization

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Proceedings Article | 8 October 2014 Paper

Calibration and application of a DSA Compact model for graphoepitaxy hole processes using contour-based metrology

Germain Fenger, Andrew Burbine, J. Andres Torres, Yuansheng Ma, Yuri Granik, Polina Krasnova, Geert Vandenberghe, Roel Gronheid, Joost Bekaert

Proceedings Volume 9235, 92351X (2014) https://doi.org/10.1117/12.2069188

KEYWORDS: Data modeling, Calibration, Photomasks, Monte Carlo methods, Double patterning technology, Ions, Cements, Metrology, Neodymium, Directed self assembly

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Significant interest from the integrated circuit (IC) industry has been placed on directed selfassembly (DSA) for sub 10nm nodes. DSA is being considered as a cost reduction complementary process to multiple patterning (MP) and an enabler of new technology nodes. However, to realize the potential of this technology, it is essential to look holistically at the necessary infrastructure from the point of view of materials, hardware, software, process integration and design methodologies which enable its deployment in large volume manufacturing. One key aspect in enabling DSA processes is the ability to mirror functionality of full chip mask synthesis and verification methods of existing tools used in production. One of those critical components is the ability to accurately model the placement of the target phases in the DSA process with a given mask shape, as well as determining the conditions at which unwanted phase transitions start to occur. Self-consistent field theory and Monte Carlo1 simulators have the capability to probe and explore the mechanisms driving the different phases of a diblock copolymer system. While such methods are appropriate to study the nature of the self-assembly process, they are computationally expensive and they cannot be used to perform mask synthesis operations nor full chip verification. The nature of a compact model is to make a series of approximations allowing a simpler description of the problem in a way that the phenomena of interest can be sufficiently captured even if it is at the expense of its generality. In this case we focus our effort in establishing the minimum set of conditions that a compact model for the manufacture of contact holes using a grapho epitaxy process for a PS-PMMA diblock copolymer system needs. The processes uses etched short trenches as guiding patterns in which the vertical DSA cylinders are formed. By focusing in the phase of interest (i.e., cylinder forming conditions), it is possible to reformulate the problem in a phenomenological formulation which accounts for the interaction among cylinders, the volume fraction of the respective co-polymers and the interaction with the confinement walls. As such, a 2D approximation to the 3D environment can be applied too simplify thhe representation of the DSA process. This enables thee use of a 2D contour for compact model training and verification. Further simplification is not recommended due to the nature of the grapho-epitaxy guiding patterns, where a simple CD measurement is not sufficient to capture the 2D environment of post routed contact patterns for sub 10nm nodes. In this paper, we will study the application of the DSA compact model to a via layer of imec’s 7nm technology node standard cells. ArF immersion lithography will be used to pattern the guides, and the layout will be DSA compliant to determine the mask complexity as well as the sensitivity of the solution to mask biases for the contact layer.

Proceedings Article | 17 April 2014 Paper

Optimization of image-based aberration metrology for EUV lithography

Zac Levinson, Germain Fenger, Andrew Burbine, Anthony Schepis, Bruce Smith

Proceedings Volume 9048, 90482M (2014) https://doi.org/10.1117/12.2046483

KEYWORDS: Metrology, Monochromatic aberrations, Wavefronts, Extreme ultraviolet lithography, Nanoimprint lithography, Diffraction, Lithography, Detection and tracking algorithms, Photomasks, Extreme ultraviolet

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Proceedings Article | 17 April 2014 Paper

Study of angular effects for optical systems into the EUV

Andrew Burbine, Zac Levinson, Anthony Schepis, Bruce Smith

Proceedings Volume 9048, 90482N (2014) https://doi.org/10.1117/12.2046488

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Photomasks, Nanoimprint lithography, Refractive index, Diffraction, EUV optics, Reflectivity, Absorption, Optics manufacturing

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Proceedings Article | 31 March 2014 Paper

Alternative method for variable aspect ratio vias using a vortex mask

Anthony Schepis, Zac Levinson, Andrew Burbine, Bruce Smith

Proceedings Volume 9052, 90521M (2014) https://doi.org/10.1117/12.2046495

KEYWORDS: Photomasks, Lithography, Spiral phase plates, Optical lithography, Fiber optic illuminators, Critical dimension metrology, Electroluminescence, Chemical elements, Phase shifts, Optical vortices

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Historically IC (integrated circuit) device scaling has bridged the gap between technology nodes. Device size reduction is enabled by increased pattern density, enhancing functionality and effectively reducing cost per chip. Exemplifying this trend are aggressive reductions in memory cell sizes that have resulted in systems with diminishing area between bit/word lines. This affords an even greater challenge in the patterning of contact level features that are inherently difficult to resolve because of their relatively small area and complex aerial image. To accommodate these trends, semiconductor device design has shifted toward the implementation of elliptical contact features. This empowers designers to maximize the use of free device space, preserving contact area and effectively reducing the via dimension just along a single axis. It is therefore critical to provide methods that enhance the resolving capacity of varying aspect ratio vias for implementation in electronic design systems. Vortex masks, characterized by their helically induced propagation of light and consequent dark core, afford great potential for the patterning of such features when coupled with a high resolution negative tone resist system. This study investigates the integration of a vortex mask in a 193nm immersion (193i) lithography system and qualifies its ability to augment aspect ratio through feature density using aerial image vector simulation. It was found that vortex fabricated vias provide a distinct resolution advantage over traditionally patterned contact features employing a 6% attenuated phase shift mask (APM). 1:1 features were resolvable at 110nm pitch with a 38nm critical dimension (CD) and 110nm depth of focus (DOF) at 10% exposure latitude (EL). Furthermore, iterative source-mask optimization was executed as means to augment aspect ratio. By employing mask asymmetries and directionally biased sources aspect ratios ranging between 1:1 and 2:1 were achievable, however, this range is ultimately dictated by pitch employed.

Showing 5 of 14 publications

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