As IC dimensions continue to shrink beyond the 22nm node, optical single exposure cannot sustain the resolution
required and various double patterning techniques have become the main stream prior to the availability of EUV
lithography. Among various kinds of double patterning techniques, positive splitting pitch lithography-etch-lithographyetch
(LELE) double patterning is chosen for printing complex foundry circuit designs. Tighter circuit CD and process
margin control in such positive splitting pitch LELE double patterning process becomes increasingly critical especially
for topography issues induced by the 1st mask patterning with the 2nd mask exposure. In this paper, laser parameters,
topography issues with the 2nd mask exposure, and SMO effects on CD performances are described in terms of the
proximity CD portion of the scanner CD budget. Laser parameters, e.g. spectral shape and bandwidth, were input into the
photolithography simulator, Prolith, to calculate their impacts on circuit CD variation. Mask-bias dependent lithographic
performance was calculated and used to illustrate the importance of well-controlled laser performance parameters.
Recommended laser bandwidth, mask bias and topography requirements are proposed, based on simulation results to
ensure that the tight CD control (< 1nm) required for advanced technology node products can be achieved.
Tight circuit CD control in a photolithographic process has become increasingly critical particularly for advanced
process nodes below 32nm, not only because of its impact on device performance but also because the CD control
requirements are approaching the limits of measurement capability. Process stability relies on tight control of every
factor which may impact the photolithographic performance. The variation of circuit CD depends on many factors, for
example, CD uniformity on reticles, focus and dose errors, lens aberrations, partial coherence variation, photoresist
performance and changes in laser spectrum. Laser bandwidth and illumination partial coherence are two significant
contributors to the proximity CD portion of the scanner CD budget. It has been reported that bandwidth can contribute
to as much as 9% of the available CD budget, which is equivalent to ~0.5nm at the 32nm node. In this paper, we are
going to focus on the contributions of key laser parameters e.g. spectral shape and bandwidth, on circuit CD variation for
an advanced node logic device. These key laser parameters will be input into the photolithography simulator, Prolith, to
calculate their impacts on circuit CD variation. Stable though-pitch proximity behavior is one of the critical topics for
foundry products, and will also be described in the paper.
Control of circuit CD in a photolithographic process has become increasingly important, particularly for those advanced nodes below 45nm because it influences device performances greatly. The variation of circuit CD depends on many factors, for example, CD uniformity on reticles, focus, lens aberrations, partial coherence, photoresist performance and LASER spectral bandwidth. In this paper, we focus on LASER spectral bandwidth effects to reduce circuit CD variation. High-volume products of a leading technology node are examined and a novel LASER control function: Gas Lifetime eXtenstion (GLX) is implemented to obtain stable LASER bandwidth. The LASER bandwidth variation was stabilized by changing laser F2 gas concentration through advanced control algorithm and signal process techniques. Product photo-pattern CD variation and device electrical performances will be examined to confirm the benefits of the LASER bandwidth stabilization.
According to the ITRS roadmap, low k1 imaging requires extremely tight control
of Critical Dimension (CD). Maintaining the same performance from one exposure to
another for new imaging requirements has become increasingly important, particularly
for matching dry and wet systems. Tool to tool CD matching depends on many factors,
for example, lens aberrations, partial coherence, laser spectral bandwidth and short range
flare.
We have performed a detailed study of laser bandwidth effects on tool CD matching for
typical 65nm node structures exposed on immersion ArF scanners. A high accuracy
on-board spectrometer was used to characterize the lithography
Laser bandwidth, allowing measurements of both the FWHM and E95 parameters of the
laser spectrum. Spectral bandwidth was adjusted over a larger range than normally
experienced during wafer exposures using Cymer's Tunable Advanced Bandwidth
Stabilization device (T-ABS) to provide controlled changes in bandwidth while
maintaining all other laser performance parameters within specification.
Measurements of both Lines and Contact Holes on 65nm node structures through all
pitches were made and correlated with bandwidth to determine the sensitivity of IDB and
C/H to bandwidth variation. We demonstrated that bandwidth can be adjusted for CD
matching on different tool using the T-ABS function.
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