Prof. Alexander I. Tartakovskii Profile

Prof. Alexander I. Tartakovskii

Professor at University of Sheffield

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Publications (8)

Proceedings Article | 17 March 2023 Presentation

Van der Waals materials for nanophotonic applications

Panaiot Zotev, Yue Wang, Toby Severs Millard, Daniel Andres-Penares, Luca Sortino, Nic Mullin, Donato Conteduca, Mauro Brotons-Gisbert, Sam Randerson, Jamie Hobbs, Brian Gerardot, Thomas Krauss, Alexander Tartakovskii

Proceedings Volume PC12423, (2023) https://doi.org/10.1117/12.2647549

KEYWORDS: Nanophotonics, Nanoantennas, Refractive index, Dielectrics, Waveguides, Visible radiation, Transparency, Transition metals, Single photon, Silicon

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Proceedings Article | 17 March 2023 Presentation

Giant effective Zeeman splitting in a monolayer semiconductor realised by spin selective strong light-matter coupling

Daniel Gillard, Thomas Lyons, Charly Leblanc, Jorge Puebla, Dmitry Solnyshkov, Lars Klompmaker, Ilya Akimov, Charalambos Louca, Pranaba Muduli, Armando Genco, Manfred Bayer, Yoshichika Otani, Guillaume Malpuech, Alexander Tartakovskii

Proceedings Volume PC12423, (2023) https://doi.org/10.1117/12.2645637

KEYWORDS: Zeeman effect, Semiconductors, Spin polarization, Polarization, Physics, Photonic nanostructures, Oscillators, Optical microcavities, Nonlinear optics, Nanotechnology

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Proceedings Article | 14 March 2018 Presentation

Valley phenomena in the microcavity polariton regime in transition metal dichalcogenides (Conference Presentation)

Alexander Tartakovskii

Proceedings Volume 10534, 105340L (2018) https://doi.org/10.1117/12.2293066

KEYWORDS: Luminescence, Quasiparticles, Oscillators, Photon polarization, Superposition, Optical microcavities, Transition metals, Polarization, Excitons, Polaritons

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Proceedings Article | 1 March 2011 Paper

Purcell-enhanced single-photon emission from an InP quantum dot coupled to GaInP photonic crystal nanocavity

Isaac Luxmoore, Ehsaneh Ahmadi, Nicholas Wasley, Alexander Tartakovskii, A. Mark Fox, Andrey Krysa, Maurice Skolnick

Proceedings Volume 7946, 794608 (2011) https://doi.org/10.1117/12.875221

KEYWORDS: Photonic crystals, Quantum dots, Indium gallium phosphide, Single photon, Semiconductors, Semiconducting wafers, Luminescence, Visible radiation, Excitons, Waveguides

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Proceedings Article | 9 February 2007 Paper

Charging and spin-polarization effects in InAs quantum dots under bipolar carrier injection

A. Tartakovskii, A. Savelyev, M. Makhonin, M. Skolnick, D. Mowbray, M. Maximov, V. Ustinov, R. Seisyan

Proceedings Volume 6471, 64710J (2007) https://doi.org/10.1117/12.697151

KEYWORDS: Excitons, Polarization, Picosecond phenomena, Quantum dots, Electrons, Indium gallium arsenide, Gallium arsenide, Indium arsenide, Semiconductors, Carrier dynamics

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Proceedings Article | 7 February 2006 Paper

Size, areal density, and emission energy control of InAs self assemble quantum dots grown on GaAs by selective area molecular beam epitaxy

J. Lin, R. Hogg, M. Hopkinson, P. Fry, I. Ross, A. Cullis, R. Kolodka, A. Tartakovskii, M. Skolnick

Proceedings Volume 6129, 61290G (2006) https://doi.org/10.1117/12.644792

KEYWORDS: Gallium arsenide, Indium arsenide, Photomasks, Dielectrics, Atomic force microscopy, Scanning electron microscopy, Quantum dots, Silicon, Molecular beam epitaxy, Indium

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Proceedings Article | 16 June 2004 Paper

Dynamics of stimulated emission in InAs quantum dot laser structures measured in pump-probe experiments

Alexander Tartakovskii, Kristian Groom, Ali Adawi, Aristide Lemaître, David Mowbray, Maurice Skolnick, Mark Hopkinson

Proceedings Volume 5352, (2004) https://doi.org/10.1117/12.527694

KEYWORDS: Picosecond phenomena, Photons, Indium arsenide, Gallium arsenide, Quantum dot lasers, Laser beam diagnostics, Ultrafast phenomena, Optical amplifiers, Transparency, Quantum dots

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Proceedings Article | 11 June 2003 Paper

Influence of temperature and free carries on four-wave mixing in semiconductor microcavities

M. Makhonin, D. Krizhanovskii, A. Dremin, A. Tartakovskii, V. Kulakovskii, N. Gippius, Maurice Skolnick, John Roberts

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.511762

KEYWORDS: Polaritons, Scattering, Excitons, Four wave mixing, Absorption, Semiconductors, Phonons, Temperature metrology, Optical microcavities, Sapphire lasers

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In semiconductor microcavities (MCs) with embedded quantum wells (QW) a strong two-dimensional (2D) confinement of the light in the growth direction leads to an enhanced exciton-photon interaction, which results in the formation of mixed exciton-photon states described in terms of quasi 2D-polaritons. The density of these states is strongly reduced compared to exciton one, due to a very small in-plane mass. As a result, one can hope that the high filling of the polariton states near the polariton band bottom can be achieved at relatively small total density without destroying the strong coupling regime. However such a filling never was reached at low excitation density range where the polariton relaxation to the polariton branch bottom is determined by the emission of acoustic phonons. The reason is in the fact that the polariton lifetime is comparable with phonon scattering time. As a result, the energy distribution of polaritons clearly demonstrates 'bottleneck effect' both under the above band gap excitation and the resonant excitation below free exciton level. However the high occupation of polariton states near the band bottom is relatively easy reached under conditions of a strong resonant excitation into the lower polariton (LP) branch at particular wavenumbers close to the inflection point of the LP dispersion. It is explained as the result of stimulated hyper-Raman scattering (or four-wave mixing) of pumped polaritons with (E_p, k_p) to states with the energy and momentum [E₁, k₁ approximately 0] and [E₂ = 2E_p - E₁, k₂ = 2k_p], which referred to as the 'signal' and 'idler,' respectively. Here we investigate the influence of a temperature and an additional above band gap excitation on the stimulated scattering in MCs. A GaAs/AlAs MC containing 6 InGaAs quantum wells in the active layer (Rabi splitting Ω of 6 - 7 meV) has been investigated in a wide range of detunings between free exciton level and bottom of the photonic mode from δ = 0 to -3 meV. The resonance excitation into an LP branch was carried out with a tunable Ti-sapphire laser. The HeNe laser was used for the additional above GaAs band gap excitation. The sample was mounted in a helium thermostat with the temperature control at T = 5 - 30 K.

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