Dr. Ainhoa Romo Negreira Profile

Dr. Ainhoa Romo Negreira

Process Engineer Cleantrack R&D at Tokyo Electron Ltd

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Publications (9)

Proceedings Article | 25 May 2022 Poster + Presentation + Paper

Approaches to enable patterning of tight pitches towards high NA EUV

Hiroki Tadatomo, Arnaud Dauendorffer, Tomoya Onitsuka, Hisashi Genjima, Yasuyuki Ido, Soichiro Okada, Yuhei Kuwahara, Arisa Hara, Congque Dinh, Seiji Fujimoto, Shinichiro Kawakami, Makoto Muramatsu, Satoru Shimura, Kathleen Nafus, Noriaki Oikawa, Kenta Ono, Yannick Feurprier, Marc Demand, Ainhoa Romo Negreira, Seiji Nagahara, Blanco Victor, Philippe Foubert, Danilo De Simone

Proceedings Volume 12056, 120560F (2022) https://doi.org/10.1117/12.2614012

KEYWORDS: Etching, Optical lithography, Extreme ultraviolet, Bridges, Extreme ultraviolet lithography, Inspection, Image processing

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Extreme ultraviolet (EUV) lithography has been used for mass production for several years. Now the resolution limit of current 0.33 NA single exposure has been approaching. To enhance the resolution limit, high NA exposure tool has been developing. At the limit, not only the stochastic failures1, but also patterning trade-off has been becoming challenging. In this paper, to overcome the patterning trade-off of LS and CH, several approaches were demonstrated for both CAR and MOR. As for chemically amplified resist (CAR), to overcome the patterning trade-off of line and space, two different approaches were demonstrated. One was a developer rinse process optimization, and the other was a top deposition treatment during etching process. By using the two approaches, pitch 24 nm LS patterns were successfully transferred. As to CAR CH patterning, a new shrink technique during etch process was successfully tested for sub 15 nm hole patterning. No missing hole detected at 12 nm hole size by voltage contrast metrology. For tighter nodes, spin-on metal oxide resist (MOR) have been considering to be used because it offers a series of advantages. It has high sensitivity and resolution because of its high photon absorption and simple reaction mechanism. It also inherently has a higher etch resistance which enables resist thickness thinner and collapse margin higher. Spin-on process of MOR is expect to contribute high productivity which is essential for high volume manufacturing (HVM). Because defect reduction is one of the key points to enable MOR process for HVM, continuous investigation of defect mitigation has been done. For pitch 32 nm LS, the mitigation was confirmed by fine optimization with the combination of the etch process and the implementation of new under layers. As to pitch 28nm line and space, optimized illumination gave better defect process windows. Moreover, a new wet developer process was successfully proposed to prevent pitch 36 nm hexagonal pillars collapse during wet development with 25% higher EUV sensitivity.

Proceedings Article | 20 March 2015 Paper

Driving DSA into volume manufacturing

Mark Somervell, Takashi Yamauchi, Soichiro Okada, Tadatoshi Tomita, Takanori Nishi, Shinichiro Kawakami, Makoto Muramatsu, Etsuo Iijima, Vinayak Rastogi, Takeo Nakano, Fumiko Iwao, Seiji Nagahara, Hiroyuki Iwaki, Makiko Dojun, Koichi Yatsuda, Toshikatsu Tobana, Ainhoa Romo Negreira, Doni Parnell, Benjamen Rathsack, Kathleen Nafus, Jean-Luc Peyre, Takahiro Kitano

Proceedings Volume 9425, 94250Q (2015) https://doi.org/10.1117/12.2085776

KEYWORDS: Etching, Semiconducting wafers, Optical lithography, Polymethylmethacrylate, Line edge roughness, Manufacturing, Image processing, Ecosystems, Line width roughness, Directed self assembly

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Proceedings Article | 28 March 2014 Paper

Evaluation of integration schemes for contact-hole grapho-epitaxy DSA: a study of substrate and template affinity control

A. Romo-Negreira, T. Younkin, R. Gronheid, S. Demuynck, N. Vandenbroeck, T. Seo, D. Guerrero, D. Parnell, M. Muramatsu, S. Kawakami, T. Yamauchi, K. Nafus, M. Somervell

Proceedings Volume 9049, 90491L (2014) https://doi.org/10.1117/12.2046119

KEYWORDS: Etching, Semiconducting wafers, Chemical vapor deposition, Polymers, Fourier transforms, Polymethylmethacrylate, Lithography, Resistance, Picosecond phenomena, Directed self assembly

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Proceedings Article | 27 March 2014 Paper

High-volume manufacturing equipment and processing for directed self-assembly applications

Mark Somervell, Takashi Yamauchi, Soichiro Okada, Tadatoshi Tomita, Takanori Nishi, Etsuo Iijima, Takeo Nakano, Takumi Ishiguro, Seiji Nagahara, Hiroyuki Iwaki, Makiko Dojun, Mariko Ozawa, Koichi Yatsuda, Toshikatsu Tobana, Ainhoa Romo Negreira, Doni Parnell, Shinchiro Kawakami, Makoto Muramatsu, Benjamen Rathsack, Kathleen Nafus, Jean-Luc Peyre, Takahiro Kitano

Proceedings Volume 9051, 90510N (2014) https://doi.org/10.1117/12.2045975

KEYWORDS: Semiconducting wafers, Etching, Polymethylmethacrylate, Thin film coatings, High volume manufacturing, Ecosystems, Lithography, Manufacturing, Manufacturing equipment, Directed self assembly

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Proceedings Article | 29 March 2013 Paper

Progress in directed self-assembly hole shrink applications

Todd Younkin, Roel Gronheid, Paulina Rincon Delgadillo, Boon Teik Chan, Nadia Vandenbroeck, Steven Demuynck, Ainhoa Romo-Negreira, Doni Parnell, Kathleen Nafus, Shigeru Tahara, Mark Somervell

Proceedings Volume 8682, 86820L (2013) https://doi.org/10.1117/12.2012353

KEYWORDS: Etching, Semiconducting wafers, Polymers, Polymethylmethacrylate, Lithography, Wet etching, Dry etching, Chemical vapor deposition, Scanning electron microscopy, Directed self assembly

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Proceedings Article | 29 March 2013 Paper

Advances in directed self assembly integration and manufacturability at 300 mm

Benjamen Rathsack, Mark Somervell, Makato Muramatsu, Keiji Tanouchi, Takahiro Kitano, Eiichi Nishimura, Koichi Yatsuda, Seiji Nagahara, Hiroyuki Iwaki, Keiji Akai, Mariko Ozawa, Ainhoa Romo Negreira, Shigeru Tahara, Kathleen Nafus

Proceedings Volume 8682, 86820K (2013) https://doi.org/10.1117/12.2012018

KEYWORDS: Etching, Polymethylmethacrylate, Manufacturing, Picosecond phenomena, Ecosystems, Semiconducting wafers, Inspection, Directed self assembly, Materials processing, Polymers

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Proceedings Article | 29 March 2013 Paper

Rectification of EUV-patterned contact holes using directed self-assembly

Roel Gronheid, Arjun Singh, Todd Younkin, Paulina Rincon Delgadillo, Paul Nealey, Boon Teik Chan, Kathleen Nafus, Ainhoa Romo Negreira, Mark Somervell

Proceedings Volume 8682, 86820A (2013) https://doi.org/10.1117/12.2012667

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Polymethylmethacrylate, Optical lithography, Critical dimension metrology, Photoresist processing, Image processing, Neodymium, Scanning electron microscopy, Directed self assembly

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Proceedings Article | 26 March 2013 Paper

Using process monitor wafers to understand directed self-assembly defects

Yi Cao, YoungJun Her, Paulina Delgadillo, Nadia Vandenbroeck, Roel Gronheid, Boon Teik Chan, Yukio Hashimoto, Ainhoa Romo, Mark Somervell, Kathleen Nafus, Paul Nealey

Proceedings Volume 8680, 86801S (2013) https://doi.org/10.1117/12.2011658

KEYWORDS: Semiconducting wafers, Plasma etching, Lithography, Etching, Polymethylmethacrylate, Plasma, Polymers, Photoresist materials, Directed self assembly, Particles

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Proceedings Article | 26 March 2013 Paper

Process sensitivities in exemplary chemo-epitaxy directed self-assembly integration

Paulina Rincon Delgadillo, Roel Gronheid, Guanyang Lin , Yi Cao, Ainhoa Romo, Mark Somervell , Kathleen Nafus , Paul Nealey

Proceedings Volume 8680, 86801H (2013) https://doi.org/10.1117/12.2011446

KEYWORDS: Chemistry, Coating, Etching, Fourier transforms, Lithography, Materials processing, Nanolithography, Thin film coatings, Picosecond phenomena, Directed self assembly

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Showing 5 of 9 publications

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