Numerous precision metrology systems for detecting quanta of any kind are based on silicon detectors. Recently, low-gain avalanche detectors (LGAD) with fast response and reduced noise level have been proposed. Beneficial applications of LGADs developed by CiS [1] in quantum detection e.g. in electron detection systems will be shown.
Nevertheless, under strong irradiation the gain layer of theses LGADs disappears possibly due to formation of ASi-Sii-defects.[2] These defects are point defects in silicon with several metastable configurations in 3 charge states. These are controllable e.g. by light and temperature. Some of them are luminescing, making this defect an interesting candidate in quantum applications, as well. Targeted manipulation by light and temperature of these PL lines in the indium (InSi-Sii) and thallium (TlSi-Sii) case will be shown. Progress in ASi-Sii-defect modelling will be presented and implications for LGAD development and applications in quantum science of these intereseting defcts in silicon are pushed forward.
[1] K. Lauer et al., Phys. Status Solidi A 219(17), 2200177 (2022).
[2] K. Lauer et al., Phys. Status Solidi A 219(19), 2200099 (2022).
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