A dual-wavelength switchable perfect absorber, comprised of a continuous Au film, an alumina (Al2O3) spacer, an indium tin oxide (ITO) layer, double-layer Dysprosium-doped cadmium oxide (CdO:Dy) films, and a gold ring array from bottom to top, is numerically designed in this paper. The epsilon-near-zero (ENZ) properties are determined by the carrier concentration of these ENZ materials. As for ITO material, the carrier (electron) concentration can be electrically modified by applying a biasing voltage V. And different growth conditions afford significant variation of carrier concentration in CdO:Dy layers. Via changing the biasing voltage V, we can achieve broadband and multifrequency absorption in our infrared absorber. Especially, the proposed infrared absorber demonstrates excellent electrical regulation performance, enabling bidirectional switching of “ON” and “OFF” states at dual-wavelength. We also further reveal the absorption mechanism by establishing quasi-Fabry–Pérot cavity resonance model. In addition, it is shown that the infrared absorber can tolerate a wide range of incident angles as well as has polarization insensitive features by verification. This device has great potential in numerous optoelectronic applications, such as invisibility cloaking, sub-diffraction imaging, and thermal emission.