18 December 2018 2-μm passive Q-switched Tm:YAP laser with SnSe2 absorber
Xueqian Liu, Qi Yang, Chunhua Zuo, Yuping Cao, Xulei Lun, Pengchao Wang, Xiaoyang Wang
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Abstract
Few-layer SnSe2 was successfully fabricated by liquid phase exfoliation method. A passive Q-switched Tm:YAP laser at the wavelength of 1940 nm was demonstrated by using SnSe2 saturable absorber (SA). Under absorbed pump power of 4.9 W, 400 mW Q-switched was achieved with the pulse width of 1.29  μs and the repetition rate of 109.77 kHz. The results indicate the promising potential of SnSe2 nanosheets as SA to achieve efficient pulsed lasers at around 2  μm.
© 2018 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2018/$25.00 © 2018 SPIE
Xueqian Liu, Qi Yang, Chunhua Zuo, Yuping Cao, Xulei Lun, Pengchao Wang, and Xiaoyang Wang "2-μm passive Q-switched Tm:YAP laser with SnSe2 absorber," Optical Engineering 57(12), 126105 (18 December 2018). https://doi.org/10.1117/1.OE.57.12.126105
Received: 23 October 2018; Accepted: 27 November 2018; Published: 18 December 2018
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CITATIONS
Cited by 14 scholarly publications.
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KEYWORDS
Q switched lasers

Pulsed laser operation

Q switching

Laser applications

Q switches

Absorption

Crystals

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