2-μm passive Q-switched Tm:YAP laser with SnSe2 absorber

Xueqian Liu; Qi Yang; Chunhua Zuo; Yuping Cao; Xulei Lun; Pengchao Wang; Xiaoyang Wang

doi:10.1117/1.OE.57.12.126105

18 December 2018 2-μm passive Q-switched Tm:YAP laser with SnSe₂ absorber

Xueqian Liu, Qi Yang, Chunhua Zuo, Yuping Cao, Xulei Lun, Pengchao Wang, Xiaoyang Wang

Author Affiliations +

Optical Engineering, Vol. 57, Issue 12, 126105 (December 2018). https://doi.org/10.1117/1.OE.57.12.126105

Abstract

Few-layer SnSe₂ was successfully fabricated by liquid phase exfoliation method. A passive Q-switched Tm:YAP laser at the wavelength of 1940 nm was demonstrated by using SnSe₂ saturable absorber (SA). Under absorbed pump power of 4.9 W, 400 mW Q-switched was achieved with the pulse width of 1.29 μs and the repetition rate of 109.77 kHz. The results indicate the promising potential of SnSe₂ nanosheets as SA to achieve efficient pulsed lasers at around 2 μm.

Citation Download Citation

Xueqian Liu, Qi Yang, Chunhua Zuo, Yuping Cao, Xulei Lun, Pengchao Wang, and Xiaoyang Wang "2-μm passive Q-switched Tm:YAP laser with SnSe₂ absorber," Optical Engineering 57(12), 126105 (18 December 2018). https://doi.org/10.1117/1.OE.57.12.126105

Received: 23 October 2018; Accepted: 27 November 2018; Published: 18 December 2018

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