1 December 2004 High-frequency analog modulation of oxide confined 670-nm vertical-cavity surface-emitting lasers
Christina Carlsson, Peter Modh, John Halonen, Richard Schatz, Anders G. Larsson
Author Affiliations +
Abstract
We investigate the bandwidth limitations and the analog modulation characteristics at microwave frequencies (0.1 to 10 GHz) of a low-capacitance oxide-confined 670-nm InGaAlP vertical-cavity surface-emitting laser (VCSEL). A maximum modulation bandwidth of 6.3 GHz, limited by thermal effects, is achieved. From measurements of distortion and noise, a spurious free dynamic range (SFDR) of 100 dB Hz2/3 is obtained at frequencies up to 2 GHz, rendering such VCSELs useful for transmission of analog signals. At higher frequencies, the SFDR drops due to the thermally limited resonance frequency.
©(2004) Society of Photo-Optical Instrumentation Engineers (SPIE)
Christina Carlsson, Peter Modh, John Halonen, Richard Schatz, and Anders G. Larsson "High-frequency analog modulation of oxide confined 670-nm vertical-cavity surface-emitting lasers," Optical Engineering 43(12), (1 December 2004). https://doi.org/10.1117/1.1814361
Published: 1 December 2004
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Vertical cavity surface emitting lasers

Modulation

Analog modulation

Thermal effects

Distortion

Aluminium gallium indium phosphide

Oxides

RELATED CONTENT

Non-mechanical beam steering of high speed VCSEL arrays
Proceedings of SPIE (February 05 2010)
Red VCSEL for automotive applications
Proceedings of SPIE (February 16 2005)
Red light VCSEL for high-temperature applications
Proceedings of SPIE (December 20 2004)
Analog modulation of 1.55-um vertical-cavity lasers
Proceedings of SPIE (April 29 1999)

Back to Top