21 August 2017 Broken-gap quantum-well tunnel junctions grown on GaSb substrates
Matthew P. Lumb, Shawn Mack, Maria Gonzalez, Kenneth J. Schmieder, Mitchell F. Bennett, Chaffra A. Affouda, James E. Moore, Robert J. Walters
Author Affiliations +
Abstract
A tunnel junction has been developed with an application to multijunction solar cells grown on GaSb and analyzed using a combination of electrical device measurements and modeling. The device employs an InAs quantum well embedded in a GaSb p/n junction, exploiting the high tunnel probability at the broken-gap interface between p-type GaSb and n-type InAs and having a minimal impact on the transparency of the device. The concept is extended to wider bandgap heterointerfaces using Al0.2Ga0.8Sb, achieving a differential resistance of 4.08×10−4  Ω cm2.
© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE) 1947-7988/2017/$25.00 © 2017 SPIE
Matthew P. Lumb, Shawn Mack, Maria Gonzalez, Kenneth J. Schmieder, Mitchell F. Bennett, Chaffra A. Affouda, James E. Moore, and Robert J. Walters "Broken-gap quantum-well tunnel junctions grown on GaSb substrates," Journal of Photonics for Energy 7(3), 032501 (21 August 2017). https://doi.org/10.1117/1.JPE.7.032501
Received: 24 March 2017; Accepted: 21 July 2017; Published: 21 August 2017
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KEYWORDS
Gallium antimonide

Quantum wells

Indium arsenide

Resistance

Silicon

Data modeling

Doping

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