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19 December 2017 Electro-optical study of nanoscale Al-Si-truncated conical photodetector with subwavelength aperture
Matityahu Karelits, Ya'akov M. Mandelbaum, Avraham R. Chelly, Avi Karsenty
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Journal of Nanophotonics, Vol. 11, Issue 4, 046021 (December 2017). https://doi.org/10.1117/1.JNP.11.046021
Abstract
A type of silicon photodiode has been designed and simulated to probe the optical near field and detect evanescent waves. These waves convey subwavelength resolution. This photodiode consists of a truncated conical shaped, silicon Schottky diode having a subwavelength aperture of 150 nm. Electrical and electro-optical simulations have been conducted. These results are promising toward the fabrication of a new generation of photodetector devices.
CC BY: © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.
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Matityahu Karelits, Ya'akov M. Mandelbaum, Avraham R. Chelly, and Avi Karsenty "Electro-optical study of nanoscale Al-Si-truncated conical photodetector with subwavelength aperture," Journal of Nanophotonics 11(4), 046021 (19 December 2017). https://doi.org/10.1117/1.JNP.11.046021
Received: 4 October 2017; Accepted: 28 November 2017; Published: 19 December 2017
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Cited by 8 scholarly publications and 1 patent.
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KEYWORDS
Photodetectors
Semiconductors
Electro optics
Silicon
Metals
Electrons
N-type semiconductors
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