19 January 2016 Fabrication and characterization of a microaccelerometer based on resonant-tunneling diodes
Mengwei Li, Tao Deng, Kang Du, WeiHang Chu, Jun Liu, Houjin Chen, Zewen Liu
Author Affiliations +
Abstract
A microaccelerometer based on gallium arsenide (GaAs) resonant-tunneling diodes (RTDs) is demonstrated. The input acceleration signal can be transformed into an output electrical signal using the meso-piezoresistive effects of the RTDs located at the root of the detection beams. Finite element simulations were performed to design, analyze, and optimize the structures of the accelerometer. The accelerometer was fabricated using a combination of GaAs IC surface and bulk micromachining techniques. Vibrating tests and shock tests were conducted to investigate the accelerometer characteristics. The experimental results revealed that the sensitivity of the RTD accelerometer was 7.91  mV/g. The noise resolution was ∼1.264  mg/√Hz, and the working frequency was up to 3 kHz.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE) 1932-5150/2016/$25.00 © 2016 SPIE
Mengwei Li, Tao Deng, Kang Du, WeiHang Chu, Jun Liu, Houjin Chen, and Zewen Liu "Fabrication and characterization of a microaccelerometer based on resonant-tunneling diodes," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(1), 015001 (19 January 2016). https://doi.org/10.1117/1.JMM.15.1.015001
Published: 19 January 2016
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Gallium arsenide

Diodes

Signal detection

Resistance

Gallium

Signal processing

Electrodes

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