Extreme ultraviolet lithography resist-based aberration metrology

Germain L. Fenger; Lei Sun; Sudharshanan Raghunathan; Obert R. Wood II; Bruce W. Smith

doi:10.1117/1.JMM.12.4.043001

2 October 2013 Extreme ultraviolet lithography resist-based aberration metrology

Germain L. Fenger, Lei Sun, Sudharshanan Raghunathan, Obert R. Wood II, Bruce W. Smith

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 12, Issue 4, 043001 (October 2013). https://doi.org/10.1117/1.JMM.12.4.043001

Abstract

Extreme ultraviolet lithography (EUVL) at 13.5 nm is currently the most promising technology for advanced integrated circuit manufacturing nodes. Since the wavelength for EUVL is an order of magnitude smaller than current optical lithography systems (193 nm), aberration tolerances on lens manufacturing must be tightened to avoid image distortion and contrast loss as they scale with wavelength. Therefore, understanding the aberrations of an EUVL system both in idle and production conditions is paramount. This study aims to assess a photoresist-based aberration metrology technique for capturing pupil information of EUVL systems that can be implemented during full system use. Several datasets have been collected on a full-field EUVL system. Various one-dimensional and two-dimensional binary structures were imaged and used for pupil wave front extraction in conjunction with computational modeling and simulations. Results show a successful extraction of a stable aberration signature over several measurements, showing the method to be sensitive to subnanometer levels of intentional aberration change through lens manipulation.

Citation Download Citation

Germain L. Fenger, Lei Sun, Sudharshanan Raghunathan, Obert R. Wood II, and Bruce W. Smith "Extreme ultraviolet lithography resist-based aberration metrology," Journal of Micro/Nanolithography, MEMS, and MOEMS 12(4), 043001 (2 October 2013). https://doi.org/10.1117/1.JMM.12.4.043001

Published: 2 October 2013

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