We measured the reflectivity of an Athena silicon pore optics sample coated with 10-nm thick iridium near the iridium L-edges (L₃ , L₂, and L₁) in a step of 1.5 eV. The derived atomic scattering factor f₂ was similar to a shape of the absorption coefficient μ near L₃ and L₂ obtained by previous x-ray absorption spectroscopy (XAS) measurements. The fine structures of f₂ of L₃ and L₂ can be represented by a strong sharp line referred to as a white line (WL) and two weak lines at center energies of ∼17 and ∼31 eV from each edge energy. The branching ratio (L₃ / L₂) of the WL is >2, which reflects the initial core-electron states available for the L₂ (2p_1/2) and L₃ (2p_3/2) processes, and the ratio remains high to the energy of +7 . 5 eV from WL. The fine structure seen in L₁ also has two weak lines, which were seen in XAS at L₁-edge. Our measurements near L₃, L₂, and L₁ edges demonstrated a different technique to provide atomic structural information as XAS. The ground calibration to measure fine structures near the edges may potentially be simplified using f₂ estimated based on μ.