Integrated Silicon-based Optical Modulators: 100 Gb/s and Beyond

Author(s): Kensuke Ogawa

Published: 2019

https://doi.org/10.1117/3.2519862

PDF ISBN: 9781510625822 | Print ISBN: 9781510625815

DESCRIPTION

This book discusses the principles and the latest progress of silicon optical modulators as cutting-edge integrated photonic devices on silicon-photonic platforms, which play key roles in modern optical communications with low power consumption, small footprints, and low manufacturing costs. Silicon Mach-Zehnder optical modulators are emphasized as the principal small-footprint optical modulator because of their superior performance in high-speed optical modulation at operational temperatures beyond 100 degrees Celsius without power-consuming thermo-electric cooling in spectral bands over 100 nm.

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Front Matter

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CHAPTER 1.

Introduction

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CHAPTER 2.

Background

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2.1 High-Capacity Optical Networks
2.1.1 Overview
2.1.2 Basic elements
2.1.3 Transmission capacity
2.1.4 Energy efficiency
2.2 Optical Modulators in High-Capacity Optical Networks
2.2.1 Optical modulator in optical transmitter
2.2.2 Semiconductor optical modulators
2.2.3 Integrated optical modulators on silicon-photonics platforms
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CHAPTER 3.

Introduction to Integrated Optical Modulators

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3.1 Classification of Optical Modulators
3.1.1 Electro-absorption optical modulators
3.1.2 Ring–resonator optical modulator using electro-refraction effects
3.1.3 Mach–Zehnder optical modulator using electro-refraction effects
3.2 High-Speed Broadband Mach–Zehnder Optical Modulators
3.2.1 Mach–Zehnder interferometer with RF electrodes
3.2.2 High-contrast intensity modulation
3.2.3 High-Q phase modulation
3.3 Integrated Silicon-Based Mach–Zehnder Optical Modulators
3.3.1 Optical-waveguide elements
3.3.2 Monolithic modulator on chip
3.3.3 Fabrication processes
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CHAPTER 4.

Optical Circuits and Waveguides in Integrated Mach–Zehnder Optical Modulators

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4.1 Optical Circuits
4.1.1 Single Mach–Zehnder optical modulator
4.1.2 Quadrature Mach–Zehnder optical modulator
4.1.3 Polarization-division-multiplexed Mach–Zehnder optical modulator
4.2 Transfer-Matrix Framework
4.2.1 Representation in transfer matrices
4.2.2 Transfer matrices of Mach–Zehnder optical modulators
4.3 Optical Waveguide and Optical Mode
4.3.1 Guided wave in ray trace
4.3.2 Mode field and wave propagation
4.4 Optical Waveguide Features
4.4.1 Channel and rib waveguides
4.4.2 Optical splitter/coupler
4.4.3 Polarization-division multiplexer
4.4.4 Other building blocks based on optical waveguides
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CHAPTER 5.

Electronic and Opto-electronic Properties of High-Speed Phase Shifters

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5.1 Physics in Phase Modulation
5.1.1 Pockels effect
5.1.2 Intraband free-carrier plasma dispersion and Drude model
5.1.3 Interband dipole transition processes
5.1.4 Spectral and thermal characteristics
5.1.5 Frequency chirping
5.2 Classification of Phase Shifters using Free-Carrier Plasma Dispersion
5.2.1 Lateral PN-junction phase shifter
5.2.2 Vertical PN-junction phase shifter
5.2.3 Other types of phase shifter
5.3 Design and Modeling of PN-Junction Phase Shifters
5.3.1 Semi-analytical method
5.3.2 Computational method
5.3.3 Equivalent-circuit model
5.3.4 Remarks on designing traveling-wave electrodes
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CHAPTER 6.

Optical, Electrical, and Electro-Optical Characteristics of Integrated Silicon-based Optical Modulators

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6.1 DC Optical Characteristics
6.1.1 Optical loss
6.1.2 Phase shift and chromatic dispersion
6.2 DC Electrical Characteristics
6.2.1 Current-voltage characteristics
6.2.2 Microscopic imaging of the PN junction
6.3 RF Frequency Characteristics
6.3.1 S-parameter characteristics
6.3.2 Effect of parasitics
6.4 Transient Characteristics
6.4.1 Response limitation by RC time constant
6.4.2 Intensity modulation characteristics at various modulation speeds
6.4.3 Intensity modulation characteristics at high temperatures
6.4.4 Phase modulation characteristics and chirp parameter
References

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CHAPTER 7.

Transmission Characteristics of Integrated Silicon-Based Optical Modulators

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7.1 Applications in Optical Network Domains at 100 Gb/s and Beyond
7.2 On–Off Keying and Pulse Amplitude Modulation
7.2.1 Apparatus and device for OOK transmission
7.2.2 Characteristics of OOK transmission
7.2.3 PAMn scheme
7.3 Phase-Shift Keying
7.3.1 Apparatus and device for PSK transmission
7.3.2 Characteristics of PSK transmission
7.4 Polarization-Division-Multiplexed Quadrature Phase-Shift Keying
7.4.1 Apparatus and device for PDM IQ transmission
7.4.2 Characteristics of PDM IQ transmission
7.5 Discrete Multi-Tone Scheme
7.5.1 Apparatus for DMT transmission
7.5.2 Characteristics of DMT transmission
7.6 Note on Transmission Characteristics
References

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CHAPTER 8.

Photonic–Electronic Integration with Silicon-Based Optical Modulators

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8.1 Integration with Electronic and Photonic Devices
8.1.1 Monolithic integration
8.1.2 Wafer-bonding integration: silicon on silicon
8.1.3 Die-bonding integration: III-V on silicon
8.1.4 Hybrid integration
8.1.5 Optical coupling and packaging
8.2 Integration of Optical Performance Monitoring
8.2.1 Technical background
8.2.2 Conventional approach
8.2.3 Optical layout for integration
8.2.4 Photonic integrated performance-monitoring circuit
8.2.5 All-silicon performance monitoring
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Apendix

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A.1 Bit Rates and Modulation Formats in High-Capacity Optical Networks
A.1.1 Bit rates
A.1.2 Formats in intensity modulation
A.1.3 Formats in phase modulation
A.1.4 Format in sub-carrier modulation
A.2 Kramers–Kronig Transformation
A.2.1 General principle
A.2.2 Computational method
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Back Matter

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