HgCdTe Photodiodes

doi:10.1117/3.2536930.ch7

HgCdTe Photodiodes

Book: Narrow-Gap Semiconductor Photodiodes

Author(s): Antoni Rogalski, Krzysztof Adamiec, Jaroslaw Rutkowski

Published: 2000

https://doi.org/10.1117/3.2536930.ch7

Author Affiliations +

Abstract

The specific advantages of HgCdTe are the direct energy gap, ability to obtain both low and high carrier concentrations, high mobility of electrons and low dielectric constant. The extremely small change of lattice constant with composition makes it possible to grow high-quality layered and graded gap structures. HgCdTe can be used for detectors operated at various modes, and can be optimized for operation at the extremely wide range of the IR spectrum (1–30 μm) and at temperatures ranging from that of liquid helium to room temperature.