Alternative Uncooled Long-Wavelength IR Photodetectors

doi:10.1117/3.717228.ch9

Book: High-Operating-Temperature Infrared Photodetectors

Author(s): Jozef Franciszek Piotrowski, Antoni Rogalski

Published: 2007

https://doi.org/10.1117/3.717228.ch9

Author Affiliations +

Abstract

As alternatives to the current market-dominant HgCdTe, a number of IIâVI and IIIâV semiconductor systems have been proposed, including Hg1âxZnxTe (HgZnTe), Hg1âxMnxTe (HgMnTe), InAs1âxSbx (InAsSb), InSb1âxBix (InSbBi), In1âxTlxSb (InTlSb), and InAs-GaSb type-II superlattices. The wide body of information concerning different methods of crystal growth and physical properties is gathered in Chapter 3. This chapter concentrates on the technology and performance of IR detectors fabricated from Hg-based and IIIâV materials.