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2 October 2024 Direct bandgap GeSn/SiGeSn THz quantum cascade laser design for room temperature operation
Quang Minh Thai, Alexei N. Baranov
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Proceedings Volume PC13141, Terahertz Emitters, Receivers, and Applications XV; PC1314103 (2024) https://doi.org/10.1117/12.3030023
Event: Optical Engineering + Applications, 2024, San Diego, California, United States
Abstract
In the quest towards room temperature THz Quantum Cascade Laser (QCL), reducing the loss due to electron-phonon scattering is a key strategy. With that goal, we present here a novel THz QCL design based on direct bandgap GeSn/SiGeSn semiconductor alloys. In contrast to the previously proposed THz QCL based on Ge/SiGe, these direct bandgap materials with low electron effective masses combine two major advantages for room temperature THz QCL. They offer not only weak electron-phonon scattering presented in non-polar group-IV semiconductors but also a high optical gain. Nextnano NEGF simulations predict the presence of gain and thus a possibility of lasing in the proposed GeSn/SiGeSn QCL up to room temperature using a conventional metal-metal waveguide.
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Quang Minh Thai and Alexei N. Baranov "Direct bandgap GeSn/SiGeSn THz quantum cascade laser design for room temperature operation", Proc. SPIE PC13141, Terahertz Emitters, Receivers, and Applications XV, PC1314103 (2 October 2024); https://doi.org/10.1117/12.3030023
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KEYWORDS
Quantum cascade lasers
Terahertz radiation
Design
Electrons
Quantum operations
Phonons
Semiconductors
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