Manipulation of interfacial magnetism utilizing voltage pulses can lead to energy-efficient scalable nanomagnetic devices. Through voltage-controlled magnetic anisotropy (VCMA), we had previously shown the potential to achieve non-volatile magnetoresistive random-access memory (MRAM) technology that is 100 times more energy-efficient than commercially available spin-transfer torque MRAM [1]. Building on prior work on VCMA-based skyrmion-mediated reversal of ferromagnetic states and its scaling to 20 nm [2], we will present new experimental demonstrations of manipulation of skyrmions in magnetoionic heterostructures with an electric field. This talk will also focus on energy-efficient magnetoionic control of skyrmions in (Co/Ni)N-based heterostructures for memory application. Furthermore, our talk also demonstrates implementing physical reservoir computing, a neuromorphic process typically used for classifying and predicting temporal data, with the energy-efficient magnetoionic process.
References:
[1] Bhattacharya et al. ACS applied materials & interfaces, 10(20), 17455-17462 (2018).
[2] Rajib et al. Scientific reports, 11(1), 20914 (2021).
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